200-MM GAN-ON-SILICON INTELLIGENT POWER SOLUTIONS TO BOOST PERFORMANCE OF A NEW GENERATION OF POWER CONVERTERS - ERIC MOREAU
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200-mm GaN-On-Silicon Intelligent Power Solutions to Boost Performance of a New Generation of Power Converters. Eric Moreau
Exagan Spin off SOITEC & CEA-LETI Created in 2014 - employees 2 sites in France – 1 in Taiwan 3 Industrial partnerships (MFG, Sales, Quality) Focus on GaN 650..1200 V Power Switch Solutions Unique 200 mm GaN/Si technology Fab-light industrial model, in-house epitaxy Joint Dev. Collaboration Grenoble Toulouse Taipei Copyright (c) 2020 EXAGAN - All Rights Reserved
Exagan’s Fab-light Model with Established 200 mm Supply Chain ▪ Robust & cost competitive manufacturing, for high volume production with limited CAPEX on materials using standard CMOS manufacturing Exagan Manufacturing Exagan direct Process transfer to Test transfer manufacturing & partner to partner volume shipment (exclusive) (exclusive) Customers STEP 1 STEP 2 STEP 3 Material Process Packaging/Test Fabs in Germany and Standard packaging MFG fab in France lines France Standard & Very high-volume Standard CMOS automated production 200mm Equipment No specific CAPEX Automated testing Process = 1 High capacity Turnkey service: equipment available direct shipment to Fab light customers Volume scalability Cost competitiveness Full technology control Copyright (c) 2020 EXAGAN - All Rights Reserved
200-mm GaN-Si: Silicon Scability, High Quality and Competitive Cost G-Stack™ : Enabling Ultimate balance between GaN thickness, quality & flatness on Si 200 mm Patented Technology Copyright (c) 2020 EXAGAN - All Rights Reserved
Designing Products for Outstanding Standards From JEDEC JC70-1 to AECQ100/101 eV/pHeV on board and fast charging Consumer Server Integrated Compact & energy power supply USB- efficient server PD Energy Industrial Automotive Solar inverter UPS & micro-inverter motor drive Design for the most demanding application in terms of quality and reliability Aerospace Military Aircraft Integrated electrification supply Copyright (c) 2020 EXAGAN - All Rights Reserved
Material & Device Based Reliability Testing GaN-On-Si EPI Lifetime Critical parameters drifts 2DEG & contact reliability on wafer level DC EPI leakage measurements I Continuous resistance monitoring Ex: Rdson DC EPI leakage model 180°C −2.9∗10−10 1.8∗10−22 −1.1∗10−2 Thermionic emission = 2 ∗ ∗ 210°C / 1000 Hrs Today : 45 Years less than 1 ppm 400 V/ 85°C Copyright (c) 2020 EXAGAN - All Rights Reserved
Product Use Case(s) Reliability Testing Repetitive HV Spikes Repetitive hard switching Buck/Boost Converter Silicon ➔ avalanche Id 22µH 650 V GaN ➔ No avalanche Operating area Voltage 100 µA DUT More voltage margin Switching/Locus modes mandatory for Vds 85°C 700 V GaN 900 V 50..150V/ns Adjustable overshoot from 40 V to 900 V dV/dt = 40 V/ns 0 ..350 V Device: EXA06C190LDS0 - 400 to 650 V - 1…to Max DC Amp. Leakage monitoring (Cp/Cpk) >> 10M spikes Different magnetizing energies - 25°C & 150 °C & Monitoring Tcase switches/Efficiencies Copyright (c) 2020 EXAGAN - All Rights Reserved
Exagan’s Product Portfolio, G-FET™ G-DRIVE™ 650V Transistor 650 V Transistor + Driver Safe and Powerful Intelligent and Fast Switching Switching TRANSISTOR + DRIVER GaN MIS Transistor Based on G-FET with embedded intelligent driver Technology Standard analog gate control Digital Control (MCU) < 500 kHz switching Up to 3 MHz switching 100 W) Applications Automotive Charger (On/Off board) Datacenter power supply (KW) (High Reliability, 3-20 KW) Industrial motor control Automotive DC/DC (1.5 KW) Product roadmap 2019 2020 2021 Generic product Application specific Automotive qualified portfolio standardized products products Copyright (c) 2020 EXAGAN - All Rights Reserved
GaN Discrete to Smart Power Integration Solution Power Power Discretes Smart HV Power Integrated Discrete Integration G-FET™ G-Drive™ Driver+ Switch(es) + Protections Switches Driver+Switches Diag. + Syst. Features+… System Integration
G-FET™ Series G-FET™ Safe and Powerful Copyright (c) 2020 EXAGAN - All Rights Reserved
Exagan GaN technology 650 V Optimized soft breakdown < 100 µA @ 900 V 100 nA @ 650 V Copyright (c) 2020 EXAGAN - All Rights Reserved
G-FET™ 650 V / 75 mOhm Eon+Eoff ~ 65 J @ 20 A @ 25°C Competition A Competition B Exa06C075LDS0 Eon+Eoff ~ 54 uJ @ 20 A @ 25°C Copyright (c) 2020 EXAGAN - All Rights Reserved
G-DRIVE™ Series G-DRIVE™ Intelligent and fast Copyright (c) 2020 EXAGAN - All Rights Reserved
G-DRIVE™ GaN Solutions G-DRIVE™ Drain • GaN-Si Power • Dedicated Driver • Built-In Protected (Current, Temp.,..) • Current sensing (Loss less) • Very fast resp. time (SC < 40 ns) • Very fast switching time (< 5ns) Copyright (c) 2020 EXAGAN - All Rights Reserved
G-DRIVE™ Implementation Simplified Application Diagram: 400 V MCU Computes Current Targeted PWM Output IN AN0 IPK_CTRL MCU Adapts PWM output MCU set current peak Drain (« IN » Signal (« IPK_CTRL ») (Current peak setting) MCU G-DRIVE Source Input Capture IPK (Detection Report) I/O FAULTB (Fault Report) G-DRIVE Reports Peak MCU Generates PWM Current Detected (« IPK » signal) (« IN » signal) GND PGND DGND AGND Current Regulation Loop Cycle by Cycle Copyright (c) 2020 EXAGAN - All Rights Reserved
G-DRIVE™ EXA06D190LDS0 ~ 25V ripple 400 Volts Fall < 7ns ~ 3 Amps Copyright (c) 2020 EXAGAN - All Rights Reserved
G-DRIVE™ at a Glance Copyright (c) 2020 EXAGAN - All Rights Reserved
Current Peak & Over Current Detections (EXA06D190MSS0) Ipk digital signal (Blanking ~ 200ns,prog. fuse) OCP digital signal (Resp. time < 40ns) example • Current Threshold set @ 10 A • Over Current Protection set @ 12 Over Current A Protection (OCP) detected (Prog. fuse) Peak Current Threshold detected Copyright (c) 2020 EXAGAN - All Rights Reserved
G-FET™ & G-DRIVE™ Evaluation Modules HS 400 V / 12 A ➔ 25 V Ripple 4 layers PCBs Switching node capacitance & Power loop Inductance optimized Copyright (c) 2020 EXAGAN - All Rights Reserved
G_FET™ Solutions for PFC Totem Pole GaNDalf 650 V/ 30m 650 V/ 190m 650 V/ 50m PQFN 15*15 PQFN 8*8 TO247-4L Copyright (c) 2020 EXAGAN - All Rights Reserved
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