XIDer - an X-ray Integrating Detector - for the ESRF-EBS Upgrade David Schimansky
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XIDer – an X-ray Integrating Detector
for the ESRF-EBS Upgrade
David Schimansky
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Contents
• About me
• The European Synchrotron Radiation Facility (ESRF) & its upgrade
program (EBS)
• XIDer: A New Multi-Purpose Detector for Time-Resolved X-Ray
Experiments at the ESRF
• Requirements & Chosen Concept
• My Job: Readout ASIC
• Conclusion & Outlook
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 1
About me
• PhD student in Prof. Fischer‘s group LSuS @ ZITI
• Studies (2011 – 2017):
• B. Sc. and M. Sc. in Physics @ University of Heidelberg
• Focus on particle, medical and detector physics as well as ASIC design
• Work @ KIP in Prof. Schultz-Coulon‘s group F11 (2015 – 2018):
• Bachelor and master thesis on ASIC characterisation and design
• Work @ ZITI in Prof. Fischer‘s group LSuS (2018 – tbd):
• PhD Thesis (May 2018 - tbd)
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 2
European Synchrotron
Radiation Facility (ESRF)
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 3
European Synchrotron Radiation Facility (ESRF)
• Joint research facility in Grenoble, France (founded in 1988)
• Funded by 22 countries (France, Germany, Italy, ..)
• Electron synchrotron x-ray source (up to ~150keV)
• First 3rd generation synchrotron (opened in 1994)
• Circumference: 844m
• 2000 publications per year
• Advertises itself as „user facility“
• Research topics (among others):
• X-ray spectroscopy
• X-ray tomography
• X-ray diffraction !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 4
Research at the ESRF
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 5
Research at the ESRF
Other: Training,
Surfaces & feasibility tests,
Interfaces proprietary Chemistry
research 12%
10%
4% Electronic &
Magnetic
Soft Condensed Properties
Matter 12%
10%
Crystals
Methods & &Ordered
Instrumentation
Structures
2% 10%
Medicine Disordered
4% Systems
4%
Macromolecular Applied
Crystallography Environment & Materials,
15% Culture Engineering
7% 10%
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Beamtime used at the ESRF (2010 data) '(0 !,.'%$&,/(
03.04.19 - HighRR BiWeekly Seminar David Schimansky 6
and the phonon-related lattice dynamics in thermo- zinc antimonide (Zn-Sb) binary systems with their intricate phase
terials. In the following, we will briefly review the most diagram [11e18], clathrates [19e24] and filled skutterudites
Synchrotron light sources around the world
ancements obtained using different synchrotron radia-
ques.
[22,25e27] featuring guest-framework characteristics, Zintl com-
pounds possessing large unit cells [28e31], half-Heusler alloys with
> 50 sources worldwide
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Taken from „The complexity of thermoelectric materials: why we need powerful and brilliant synchrotron radiation sources?“ (W. Xu, Y. Liu, A. Marcelli, P.P. Shang, W.S. Liu, '(0 !,.'%$&,/(
. World in
map of the Today
Materials main synchrotron radiation
Physics, Volume facilities in all continents. At present, SR facilities are not present only in Africa. SR, synchrotron radiation.
6, 2018)
03.04.19 - HighRR BiWeekly Seminar David Schimansky 7
and the phonon-related lattice dynamics in thermo- zinc antimonide (Zn-Sb) binary systems with their intricate phase
terials. In the following, we will briefly review the most diagram [11e18], clathrates [19e24] and filled skutterudites
Synchrotron light sources around the world
ancements obtained using different synchrotron radia-
ques.
[22,25e27] featuring guest-framework characteristics, Zintl com-
pounds possessing large unit cells [28e31], half-Heusler alloys with
> 50 sources worldwide
High energy sources (6-8 GeV e-
in storage rings)
World‘s first 4th generation
synchrotrons (@ 3 GeV)
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Taken from „The complexity of thermoelectric materials: why we need powerful and brilliant synchrotron radiation sources?“ (W. Xu, Y. Liu, A. Marcelli, P.P. Shang, W.S. Liu, '(0 !,.'%$&,/(
. World in
map of the Today
Materials main synchrotron radiation
Physics, Volume facilities in all continents. At present, SR facilities are not present only in Africa. SR, synchrotron radiation.
6, 2018)
03.04.19 - HighRR BiWeekly Seminar David Schimansky 8
ESRF Upgrade Program (Road to Fourth Generation)
• Extremely-Brilliant Source (ESRF-EBS):
• Storage ring upgrade program over the period 2015-2022
• Improve energy efficiency (30% cost reduction)
• Increase brilliance of x-ray beam
• Detector Development Program (DDP):
• Reach out to external laboratories
• Build new detectors tailored to the upgraded source
• R&D Phase from 2017 to 2021
• Engineering Phase from 2020 to 2024
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 9ESRF Upgrade Program (Road to Fourth Generation)
• Extremely-Brilliant Source (ESRF-EBS):
• Storage ring upgrade program over the period 2015-2022
• Improve energy efficiency (30% cost reduction)
• Increase brilliance of x-ray beam
• Detector Development Program (DDP):
• Reach out to external laboratories
• Build new detectors tailored to the upgraded source
• R&D Phase from 2017 to 2021
• Engineering Phase from 2020 to 2024
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 10Why SuS?
Experience with similar setup: DSSC (DePFET Sensor with Signal Compression) @ European XFEL
15 mm Full processing chain in every pixel
• Low noise x-ray detector
• Specs:
• 0.5-6 keV
204 µm
• Single photon sensitivity 4096 Pixels
• Dynamic range of >104 ph
• Burst data rates of
IO and Control
150Gbps/chip
236 µm
• SuS‘s job: Integration of readout ASIC parts, ASIC control block, ASIC readout, in-pixel RAM, ...
• Fully assembled detector: 1MPix, 32 sensors, 256 ASICs !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 11XIDer: X-ray Integrating
Detector
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 12Project Outline
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XIDer:
• 4-year funding: Shared 50/50 by ESRF and University of Heidelberg
• Two PhD students and half a postdoc in Heidelberg
• One PhD student and staff @ ESRF
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 13Detector Requirements
Build detector for any kind of (time-resolved) x-ray diffraction experiment at the ESRF:
• Energy range: 10-100keV
• Different spatial resolutions: 100µm vs. 200µm pixel pitch (clusterable pixels)
%&
• Dynamic range: Single Photons up to > 10$$
''( )
• Cope with different bunch filling modes for storage ring
• Time-resolved ( >100k frames/s)
• Flexible readout schemes (single frame, accumulated frames ..)
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 14Detector Requirements: Bunch modes
Electron bunches
Detector
Signal
Storage ring
t
One orbit
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 15Detector Requirements: Bunch modes
Electron bunches
Detector
Signal
Storage ring
t
One orbit
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 16Detector Requirements: Bunch modes/ Photon Fluxes
Example cases of possible bunch modes
7/8 + 1 Bunch Mode
16 Bunch Mode
16 bunch mode 7/8 +1 bunch mode
868 bunches 1 bunch
175 ns 2.45 μs 175 ns 175 ns
1 16
One orbit
2.8 μs (2.8µs) 2.8 μs
One orbit (2.8µs)
• Pulsed illumination for time-resolved experiments • Quasi-continuous illumination for 7/8 of the orbital period
• Single bunches have to be recorded and processed • Integrate many bunches into one image
%&
• Need single photon sensitivity • Expected > 10$$
''()
Big dynamic range
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 17Detector Requirements: Frame Rates
See „Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage“
(A. Rack, M. Scheel, A. N. Danilewsky in IUCrJ, Volume 3, 2016)
• Preliminary goal: >100k frames per second (e.g. Si fracture observed @ ~35kHz)
• Main challenge: Data rates
• Example: 900k pixels, 8 bit per pixel, 100kHz frame-rate ⇒ 90GB/s !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 18Preliminary Detector Concept
2D hybrid integrating pixel detector
Pixel 1 Pixel 2 Pixel 3 ... HV (-)
h+
e- Semiconductor sensor (CdTe)
Readout ASIC
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 19Preliminary Detector Concept
2D hybrid integrating pixel detector
Pixel 1 Pixel 2 Pixel 3 ... HV (-)
h+
Designed in Grenoble e- Semiconductor sensor (CdTe)
Our job Readout ASIC
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 20Preliminary Detector Concept: Floorplan
100 µm ...
Pixel
...
(192 pixels)
19.2 mm
...
100 µm ASIC
(4 ASICs)
~77 mm
Detector Module
...
12.8 mm
(128 pixels)
• ~25k pixels per ASIC
~115 mm
(9 ASICs)
• 36 ASICs
• ~900k pixel in total ≙ 90cm2 detector surface
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 21Picking the Sensor Material
10-1 100 101 102 103 104 105 106 107 eV
Infrared Ultraviolet X-rays
10-100keV
300µm Si ≈ 1-2% absorption Thicknesses needed for 99% absorption
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 22Readout ASIC
Brainstorming and first steps
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 23ASIC: Essentials
Channel
Signal
Pixel Front-End Storage Readout
Processing
Logic
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 24ASIC: Channel with Integrating Front-End
Δ-)./ ~'()*
⇒ Δ-)./ ~!"# 2
!"# = ℎ&"# 1
'()* ~!"# Isig Vint 0010
Sensor ADC Storage
• Sensor generates charge signal when an incoming photon is absorbed
• Charge sensitive amplifier integrates charge in capacitor: Vint ~ Qsig
• Well known energy of x-ray photons allows calculating the amount of photons from the
integrated charge by the CSA
• However: Dynamic range is limited by depth of ADC (and supply voltage) !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 25ASIC: Integrating Front-End, ADC Saturation
'ℎ
Per 100x100µm2 pixel! 100Mcps ≙ 10%&
))* +
• Depending on the photon flux and amount of
bits, ADC saturates in a matter of µs
11 bit
⇒ not suited for long exposure times up to a
few ms in 7/8 bunch mode
10 bit • Possible solutions (among others):
• Digital Integration
9 bit
• „Continuous Conversion“/Charge Removal
8 bit
7 bit
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 26ASIC: Integrating Front-End, Continuous Conversion
FE without continuous conversion:
• Sensor charge is collected and measured
Sensor
by CSA
SA
C
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 27ASIC: Integrating Front-End, Continuous Conversion
FE without continuous conversion:
• Sensor charge is collected and measured
Sensor
by CSA
• If bucket full (ADC saturates): Additional
charge is lost
SA
C
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 28ASIC: Integrating Front-End, Continuous Conversion
Idea of continuous conversion:
• CSA indicates if there is charge in the
Sensor
bucket
• Use „spoons“ to empty charge bucket
SA
C
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 29ASIC: Integrating Front-End, Continuous Conversion
Idea of continuous conversion:
• CSA indicates if there is charge in the
Sensor
bucket
• Use „spoons“ to empty charge bucket
SA
C
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 30ASIC: Integrating Front-End, Continuous Conversion
Idea of continuous conversion:
• CSA indicates if there is charge in the
Sensor
bucket
• Use „spoons“ to empty charge bucket
SA
C
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 31ASIC: Integrating Front-End, Continuous Conversion
Idea of continuous conversion:
• CSA indicates if there is charge in the
Sensor
bucket
• Use „spoons“ to empty charge bucket
• Remember amount of spoons needed
SA
• Calculate charge via spoon size and
C
amount => Conversion
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 32ASIC: Integrating Front-End, Continuous Conversion
DigOut Counter
(=0)
Charge Pump Comparator
Vint ~ Qsig
Signal
peak
Charge Sensitive
Sensor
Isig Amplifier
Vint
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 33ASIC: Integrating Front-End, Continuous Conversion
DigOut
Counter
(=0)
Charge Pump Comparator
Vint ~ Qsig
Signal
peak
Charge Sensitive
Sensor
Isig Amplifier
Vint
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 34ASIC: Integrating Front-End, Continuous Conversion
Comparator fires if Vint is
above threshold and
activates charge pump and
DigOut Counter counter
(=0)
Comparator
applies
threshold to Vint
Charge Pump Comparator
Vint ~ Qsig
Signal
peak
Charge Sensitive
Sensor
Isig Amplifier
Vint
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 35ASIC: Integrating Front-End, Continuous Conversion
Counts injected
Comparator fires if Vint is
charge packages
above threshold and
activates charge pump and
DigOut Counter
Counter counter
(=1)
Comparator
applies
threshold to Vint
Injects well defined Charge Pump
Charge Pump Comparator
Comparator
charge packages (e.g.
~ single photon)
Vint ~ Qsig
Signal Vint is discharged
peak and falls below
threshold
Charge Sensitive
Charge Sensitive
Sensor
Isig Amplifier
Amplifier
Charge pump VVint
int
injects negative
signal !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 36ASIC: Integrating Front-End, Continuous Conversion
#$
• Similar circuits reach counting rates up to 1010
#%&'()*
(see „High Dynamic Range X-Ray Detector Pixel Architectures
Utilizing Charge Removal“ , IEEE Trans. Nucl. Sci, vol. 64, no. 4, April
2017)
#$
• With 100µm pixels that is a manageable flux of 10+,
--.*
#$
(requirement: > 10++ )
--.*
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 37ASIC: Integrating Front-End, First Prototype
gain = 8
charge
à equal CPs
input • 1st stage pumps 8 ph
• 2nd stage pumps 1 ph
• fpump ~ 100 MHz
à 1st stage: 100 ph in 175ns
&'
à 10# − 10% &()*+,-
serial
digital
output !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 38ASIC – SUS65T1
First Submission Nov. 14, 2018
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 39SUS65T1
• SuS‘s first submission in the TSMC 65nm technology
• Main goals:
• Get to know the technology
• Test prototype structures (bond pads, I/O circuits, synthesized digital blocks, JTAG, FE, ..)
• Gain experience with sensor connection (bump bonding) and characterisation
• Implemented blocks are not optimised for performance
• The manufactured chip arrived a month ago
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 40SUS65T1: Block diagram
OUT_PX_MUX SUS65T1
Pixel connection
FE1 FE_Out[0]
PixelBus
...
FE2
FE_Out[1]
MUX_ctrl FE_ctrl cnt_en
ControlBlock (JTAG,
...
Other sequencer, serial data DACs
output)
cmn_ctrl
CommonPx CLK TCK TDI TMS TDO RUN MON_DIG !"#$%&'()*&+"#(,-
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SER_OUT
03.04.19 - HighRR BiWeekly Seminar David Schimansky 41SUS65T1: Layout
Pixel bump bond
I/O & power pads matrix: 28 pads
(50x50µm2) for
100µm and
200µm pitch
configurations
Pixel wire bonds: 28 pads
Analogue output buffers connected to the matrix
to monitor one FE
5 multiplexers + switches to
common potential
2 frontends + charge
other injection circuits
Control block: JTAG interface for
slow control (MUX, DACs etc.) +
sequencer for dynamic control
of FEs + pixel logic
DACs
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 42SUS65T1: First Signs of Life
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 43SUS65T1: First Signs of Life
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 44SUS65T1: First Signs of Life
keep CSA in permanent reset
DDYN_RESET=1
SUS65T1
FE output buffer Oscilloscope
-
FE_OUT
VREF +
(via DAC)
(DAC15)
Buffer bias
Vc, Ilegs
Frontend , Itail
CSA (DAC5)
(DAC4,10,11)
This first test shows qualitatively:
• I/O pads work
• JTAG slow control works
• DACs work
• Frontend amplifier works !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 45Conclusion & Outlook
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 46Conclusion
• Project name: XIDer
• General aim: Multi-purpose detector for time-resolved x-ray experiments at the ESRF
• My job:
• Design, characterisation & test of the readout ASIC
• Verify feasibility
• Parallel development of readout ASIC (in Heidelberg) and sensor (in Grenoble) has begun
• ASIC with first prototype readout structures arrived a month ago and is currently under test
• First sensor prototype structures for testing have recently arrived and are under test
• First tests with ASIC show qualitative functionality of most of the prototype structures
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 47Outlook
Next steps in the project:
• Continue functional tests of prototype ASIC SUS65T1
• Quantitative analysis of prototype frontend performance
• Design of alternative readout architectures & improvements
• Test different procedures of bump bonding the sensor to the ASIC
• Sensor prototype characterisation
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 48Backup
!"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 49Backup
CdTe
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 50CdTe Crystals
Taken from H. Shiraki et al „THM growth and characterization of 100 mm diameter CdTe single crystals“, IEEE Trans. Nucl. Sci, vol. 54, pp. 117-1723, 2009
• 100mm diameter, 300mm length
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 51tion is the end result of the creation o
Cd(Zn)Te Polarisation electric field, and the method can be s
"1! The amount of charge, denoted
sary to collapse the electric field at a
lated.
"2! The time dependence, Q"T!, of
Count rate collapses for high(a)Resulting
photoncounts
fluxes:
above threshold charge density within the detector is c
"3! Polarization results when the
"i.e., steady state value! of the build
exceeds that necessary to collapse th
pinch point. Mathematically, thi
limT→" Q"T! = Q*.
The result of the third step, as we w
functional dependence of the maximum
critical flux #!*! on device design and
A. Necessary positive
We begin by considering a photon
flux #! describing the number of ph
intersect the cathode surface of the d
The source is assumed to be mono
taken as the mean value of the x-ray
and denoted by Ē!. The generation rat
Taken fromcounts
(b)Measured „Nature of polarization in wide-bandgap semiconductor detectors under
above threshold within the detector, therefore, is ex
high-flux irradiation: Application to semi-insulating Cd Zn Te“ (D. S. Bale, C. Szeles,
and has the form
1-x x
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Phys. Rev. B, 2008) '(0 !,.'%$&,/(
FIG. 5. "a! Simulated counts above a 25 keV threshold as the
photon flux rate "x-ray tube current! is increased. "b! Measured Ē! 1 −
03.04.19 - HighRR BiWeekly Seminar
$"Z!52= #! e
counts for 256 channelsDavid
of aSchimansky
polarizing detector as the photon flux %czt &
rate "tube current! is increased.Backup
Sensor-Prototype
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 53Sensor Prototype
4mm
For bump bonding on ASIC
300µm
For bump bonding or gluing on interconnector
100µm
4mm
• 4x4 pixel test prototypes
• Three different pitches (100µm, 200µm, 300µm)
200µm
• Different bond pad configurations (centered, cornered) for
bump bonding onto ASIC as well as interconnector
• Will be sent out for manufacturing soon
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 54Sensor Prototype: Possible ASIC Connections
Interconnector
Test ASIC
Test ASIC
Test ASIC
⇒ Test ASIC needs a flexible bonding structure for its connection to the pixel matrix
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 55Backup
Synchrotrons
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 56Synchrotron Radiation Brilliance
photon flux
SR Brilliance =
(ΔA) (ΔΩ) (Δλ/λ)
source area spectral interval
solid angle
• The figure of merit for a synchrotron‘s performance
• High brilliance ≙ high flux of useful photons at the sample and detector
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 57Synchrotron Generations
average Brilliance peak
photons/s/mm2/mrad2/0.1%BW
1035
• 1st : Particle accelerators that generate 4th generation FELs
synchrotron light as a parasitic effect 1030
1025
• 2nd : Dedicated synchrotron light production planned
3rd generation
current
1020
• 3rd : Higher brilliance by introducing insertion
devices (wigglers/undulators) dedicated
1015 low emittance
2nd generation
• 4th : Even higher brilliance and coherence parasitic
1st generation
10
10 Synchrotron sources
X-ray tubes
105
1900 1920 1940 1960 1980 2000 2020 2040 !"#$%&'()*&+"#(,-
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Year
03.04.19 - HighRR BiWeekly Seminar David Schimansky 58Backup
ESRF
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 59Research at the ESRF
• ~50 x-ray beam lines publicly available to external
research groups as well as industry
• Six major research groups maintain these beam
lines and tailor them to specific areas of research:
• Structure of materials
• Structural biology
• Electronic Structure, Magnetism and Dynamics
• Matter at extremes
• Complex systems & biomedical sciences
• X-ray nanoprobes
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 60Research at the ESRF
Structure of Materials:
1
ID3
• Study composition, atomic structure and crystalline
state of materials via diffraction and spectroscopy
• Observe defects and traps in materials
• Example: Formation of a crack in a silicon wafer
observed with x-ray diffraction imaging (35kHz)
ID
22
See „Real-time direct and diffraction
Scheel, A. N. Danilewsky in IUCrJ,
X-ray imaging of irregular silicon
wafer breakage“ (A. Rack, M.
ID1
9
Volume 3, 2016)
ID11
5 A
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 61Research at the ESRF
Matter at extremes
• Study behaviour of matter in extreme conditions with
ID27
pressures beyond 200GPa and temperatures up to 5000K
• Example: Use diamond anvil cells and laser heating to
ID24
BM
emulate conditions in earth‘s core
23
ID
06
ID18
5 B
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 62Backup
Sensor
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 63Sensor Material
10-1 100 101 102 103 104 105 106 107 eV
• Energy range: 10-100keV
Infrared Ultraviolet X-rays
• Usual aim: Build detector with high stopping power to absorb as 10-100keV
many photons as possible
&'
• Dominant process in our energy regime: Photo effect "#$ ~ *
( )+
⇒ The higher the energy, the less absorption (via p.e.)
⇒ Use material with high Z (and high density)
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 64Cd(Zn)Te Sensor
• Tendency towards using Cd(Zn)Te due to:
+ High stopping power (Z, !) in desired energy region
+ Low noise @ room temperature due to band gap size (1.44eV compared to Germanium: 0.66eV)
• However, Cd(Zn)Te entails many challenges:
- Large crystals hard to produce
- Hole trapping
- Afterglow
- Polarisation
- Brittle
- Sensitive to heat
- Oxidizes in contact to air
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 65Backup
Frontend
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 66ASIC: Integrating Front-End, Digital Integration
ADC conversion + reset
• Split integration into sub intervals
Integrate
• Summate sub images in storage
• Choice of integration window size
depends on bunch structure, photon rate,
Exposure time
conversion time, # ADC bits, ADU, DNL
etc.
e.g. 100 + 100 = 200
Vint
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 67SUS65T1: Pixel Matrix Connection
Wire bonds
ASIC • 28 pads allow connecting sensors with
...
100µm and 200µm pitch
200µm 100µm
• Additional wire bond pads connected to
pixel matrix (not shown)
...
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 68SUS65T1: Pixel Matrix Connection
Wire bonds
ASIC • 28 pads allow connecting sensors with
...
100µm and 200µm pitch
200µm 100µm
• Additional wire bond pads connected to
pixel matrix (not shown)
...
100µm pitch !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 69SUS65T1: Pixel Matrix Connection
Wire bonds
ASIC • 28 pads allow connecting sensors with
...
100µm and 200µm pitch
200µm 100µm
• Additional wire bond pads connected to
pixel matrix (not shown)
...
200µm pitch !"#$%&'()*&+"#(,-
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03.04.19 - HighRR BiWeekly Seminar David Schimansky 70You can also read
