AIDA Michael Moll CERN EP-DT, Geneva, Switzerland - CERN Indico
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AIDA
Michael Moll
CERN EP-DT, Geneva,
Switzerland
2 July 2019 Michael Moll 1
Defect and Material
Characterization
• Main activities
• Detection and microscopic characterization of standard and material
engineered silicon via dedicated techniques (DLTS, TSC, TDRC, SIMS, ICP-
MS, PITS, FTIR, TCT, EPR, HRTEM)
• Identification of electrically active defects induced by irradiation responsible
for trapping, leakage current, change of Neff , change of E-Field
• Studying possible application for radiation hardening
• Deliver input for device simulations (e.g. TCAD) to predict detector
performance under various conditions
• Milestones [2018-2022]
• WP 1.1 p-type silicon [7 MS]
• WP 1.2 Cluster defects [4 MS]
• WP 1.3 Theory of defects and defect kinetics modeling [5 MS]
2 July 2019 Michael Moll 2
Defect and Material
Characterization
• WP 1.1. Electrically active defects in p-type silicon
Analysis of electrically active defects and of the radiation induced changes in the
electrical characteristics of devices built on p-type silicon.
• M1: Detection and characterization of all radiation induced defects in STFZ and engineered silicon
(Q3/2019)
• M2: Determine defect annealing behaviour in STFZ and engineered silicon. Correlation with device
performances (Q4/2019)
• M3: Determine defect transformations and kinetics in STFZ and engineered silicon after treatments at
high temperatures (between 150 °C and 350 °C). Correlation with the device performance (Q3/2020)
• M4: Identify the role of impurities in defect formation (Q1/2021)
• M5: Detection/characterization of radiation induced defects in LGAD and HV-CMOS sensors made with
STFZ and engineered p-type silicon, establishing annealing behaviour and correlation with electrical
performance (Q3/2021)
• M6: Validity tests on optimized material engineered sensors (pads, LGADs and HV-CMOSs).
Comparison between prediction and experiments (Q1/2022)
• M7: Validity tests on finally optimized material engineered sensors (pads, LGADs and HV-CMOSs)
(Q3/2023)
2 July 2019 Michael Moll 3Defect and Material
Characterization
• WP 1.2. Microstructural Investigations on extended and clustered defects
This work targets microstructural investigations of extended and clustered defects by electron
microscopy:
• M1: Microstructural characterization of the radiation induced clustered defects (fluences between
1015 and 1017 neq cm-2) and monitoring of the evolution of clusters at 80 °C (Q3/2019)
• M2: In situ- annealing studies at 5 temperatures (between 150 °C and 350 °C) in order to determine
the structural transformations of the extended and clustered defects (Q3/2020)
• M3: Microstructural characterization of the oxide-semiconductor interface in irradiated LGADs and
HV-CMOS devices, time evolution at 80 °C (Q3/2021)
• M4: Microstructural characterization of the oxide-semiconductor interface in irradiated optimized
LGADs and HV-CMOS devices (Q3/2022)
• WP 1.3 Theory of defects and defect kinetics modelling
• M1: Modelling of the detected defect generation/kinetics and of the impact on the device
performance corresponding to annealing treatments at 80 °C (Q3/2020)
• M2: Modelling of the detected defect generation/kinetics and of the impact on the device
performance corresponding to annealing at temperatures between 150 °C and 350 °C and final
assessment of the role of the intentional added impurities (Q1/2021)
• M3: Identification of the optimal impurity concentrations for pads, LGADs and HV-CMOSs as input
for production. (Q3/2021)
• M4: Improvements of the developed models according to validity test foreseen as 1.1-M6 and
provide new optimization solutions for 5.1.1-M7. (Q3/2022)
• M5: Validity test for the developed theoretical models based on the results obtained on 1.1-M7
optimized sensors (Q3/2023)
2 July 2019 Michael Moll 4Device Characterization
and Device Simulation
• Milestones [2018-2022]
• WP 2.1. Silicon materials [5 MS]
• WP 2.2. Extreme fluences [5 MS]
• WP 2.3. Experimental techniques [3 MS]
• WP 2.4. Surface damage [1 MS]
• WP 2.5. TCAD simulations [7 MS]
2 July 2019 Michael Moll 5Device Characterization
and Device Simulation
• WP 2.1. Silicon Materials
FZ p-type silicon will be used for ATLAS and CMS upgrades. In running pixel systems
oxygen enriched (DOFZ) n-type with n-side readout is used. For radiation hardening
different impurity engineered material like MCz, oxygen enriched epitaxial (DOEPI) or
nitrogen enriched FZ or EPI will be tested. Also the optimal thickness of the sensor
material has to be studied in more detail.
• M1: Development of impurity engineered p-type silicon with possible vendors (Topsil for N
enriched FZ, …) (Q3/2019)
• M2: Search for possible production of nitrogen enriched epitaxial silicon (e.g. ITME) (Q3/2019)
• M3: Production of diodes, strip and pixel sensors with engineered materials by different vendors
(CiS, CNM, FBK, ….) and field tests (Q3/2019)
• M4: Several irradiation campaigns with different particles up to fluences exceeding 1017 neq/cm2
on standard and engineered materials (Q4/2020)
• M5: Macroscopic studies on all irradiated devices including Edge-TCT, TPA-TCT and
investigations with radioactive sources/test-beams, including annealing studies (Q3/2023).
2 July 2019 Michael Moll 6Device Characterization
and Device Simulation
• WP 2.2. Extreme Fluences
Device properties (I-V, C-V-f, CCE) on different p-type silicon materials to
fluences ranging from 1016 to 5×1017 neq cm-2 with neutrons and protons of
different energies.
• M1: Precise mobility parametrization for electrons and holes (Q4/2019)
• M2: Development of method for extraction of trapping times/distances from the
measured data (Q3/2020)
• M3: Establishing leakage current behavior at extreme fluences (Q3/2020)
• M4: Measurement of recombination lifetimes in silicon bulk (Q3/2021)
• M5: Modeling/parameterization of CCE(fluence, voltage, annealing time)
(Q3/2023)
2 July 2019 Michael Moll 7Device Characterization
and Device Simulation
• WP 2.3. Experimental techniques
Beside standard device characterization tools (I-V, C-V, TCT), more complex
systems like “Edge-TCT” and “Two Photon Absorption (TPA)” technique became
available.
• M1: Full specification of a TPA-TCT method for the characterization of irradiated devices
(Q4/2018)
• M2: Commissioning of the top-bench fiber-based femto second laser TPA-TCT setup at
the SSD/CERN (Q4/2019).
• M3: Phenomenological parametrization of the radiation effects on diodes using the TPA-
TCT method (Q3/2020)
2 July 2019 Michael Moll 8Device Characterization
and Device Simulation
• WP 2.5. TCAD simulations and custom device simulators
• M1: Comparison of commercial TCAD tools; preparation of a recommendation for
parameters and physics models (Q4/2019)
• M2: Development of a reliable radiation damage model (I-V, C-V, CCE and the E-
field) covering the HL-LHC fluences for protons and neutrons for a given operation
temperature (Q4/2020)
• M3: Model M1 extended to cover temperature dependence of the bulk-damage
related effects from room temperature down to -30 °C. (Q3/2021):
• M4: Model from M2 extended to cover annealing effects (Q3/2022):
• M5: Model of the donor and acceptor removal (SiPMs, LGAD, CMOS,..) (Q3/2020):
• M6: Surface damage model with implementation of surface damage in p-type
segmented sensors (Q1/2021)
• M7: Evaluation of possible implementation of cluster defects in commercial TCAD
device simulators using a charge carrier occupation dependent energy level
distribution (Q2/2021)
2 July 2019 Michael Moll 9CiS – RD50 06/2019
2 July 2019 Michael Moll 10CiS – RD50 06/2019
2 July 2019 Michael Moll 11CiS – RD50 06/2019
2 July 2019 Michael Moll 12Budget – for discussion
Acceptor removal
Basis of Estimate Total Total (1/3)
BOI [PM] [#] [EUR/unit] [EUR] [EUR] [EUR]
Doctoral Student CERN 18 3300 59400
Doctoral Student Hamburg 18 2000 36000
PostDoc CERN 12 8900 106800
202200
Travel 4 travel/year 16 800 12800 12800
Irradiations 8 2000 16000
Maskset 1 8250 8250
Wafers 2 4000 8000
Process 2 12500 25000
SIMS/SR/FTIR 15000
72250
CERN 1PM/year [PHYS] 4 6800 27200
CERN 1PM/year [PHYS] 4 6800 27200
Hamburg 1PM/year[Spain] 4 5500 22000
NIMP 1PM/year[Spain] 4 4000 16000
#-- sum ---# 92400
sum 64 64850 379650 379650 126550
2 July 2019 Michael Moll 13You can also read
