Power Semiconductors for New Energies - September 2019 Alfredo Arno - STMicroelectronics
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Power Semiconductors for New Energies September 2019 Alfredo Arno
Power Semiconductors for New Energies
High Power Modules Intelligent Power
& Modules
Drivers SLIMM
Si
SiC & GaN
HV & LV
New Energies World Scenario
Potential Saving
• Energy saving via improvements in conversion efficiency is the best way to reduce power
consumption and, consequently, minimize energy waste.
Transportation By 2020 more Electric Industry
consumes than lighting uses consumes Electric motors
More than More than use
20% 30 20% 50% 60%
of world
billion of global of world of industry
energy Smart Things electricity energy electricity
needing power
Power Discrete in HEV EV
Key Elements in Electric Vehicle
Not in BEV
PHEV and BEV only
ICE
DC-DC HV Traction Inverter
• HV MOSFET DM2 3-phase AC
• SiC MOSFET and IGBT
• SiC MOSFET • Modules
• Modules Traction Inverter • TVS
• TVS
Electric Motor or MUG (MHEV)
DC-DC
On-Board Charger (OBC)
HV AC • HV - SCR, Diodes, SiC
400–800 V Charging
Battery Management Diodes & MOSFETs, M5/
Systems (BMS) OBC DM2/DM6
• LV MOSFET BMS • LV – MOSFETs and Diodes
• Schottky • Modules
• TVS • TVS
DC-DC DC-DC Fast DC
HV/12 V HV/48 V Charging
12 V 48 V
DC-DC HV to 12V DC-DC HV to 48V
• HV MOSFET DM2/DM6 • HV MOSFET DM2/DM6
• LV MOSFET • LV MOSFET
• TVS • TVS
12 V 48 V
Systems Systems
Automotive Discrete Products
Diodes, Thyristors & TVS MOSFETs & IGBTs Filters & Protection New: SiC, FERD, Flat Packages & Modules
Safety Body & Convenience
• Airbag • BCM & gateways
• Camera • Dashboard
• RADAR • HVAC Powertrain for HEV
Door Zone • LED • Bidirectional Aux Power Converter
• Doors • Roof & Seat Control • Electric Traction
• Mirror • AC/DC (On Board Charger)
• Main Inverter
• Start-stop
Infotainment & Telematics
• Infotainment Chassis
• Sound system
• Telematics • ABS and ESC
• Vehicle-to Everything (V2X) • Active suspension
• Electric power steering
Powertrain for ICE • Electric park and brake
• CNG/LPG engine control
• Direct Injection
• Transmission
Discrete Products 20% content of Auto Electronics (60% of Auto Power Electronics)
ACEPACK™ Modules
Adaptable, Compact and Easier PACKage
ACEPACK Key features Configurations Target Applications
• 100% controlled by ST for silicon • CIB
(SiC, MOSFET, IGBT and Diodes) • Six-pack
•
1&2 • Compact design and cost-effective system
approach for a plug & play system solution •
Three level Boost
….
• Configuration flexibility
• 2500Vrms electrical isolation
• SMD assembly
• Top side cooling • Bridge rectifier
SMIT •
•
Low thermal resistance
Reduced parasitic inductance
•
•
Half Bridge
Boost
and capacitance • ….
• 2500Vrms electrical isolation
• Optimized for 200 kW inverters
• 1200V SiC MOSFET based switch
DRIVE • Improved light load power losses for extended • Six-pack
EV driving ranges
• Extreme low conduction losses
• Short circuit ruggedness
• Direct Cooled Cu Base Plate with pin fins
ACEPACK™ 1 & 2
Features and Benefits
Adaptable
Compact
Press FIT and solder pins options, Several configurations (CIB, 6pack ..)
configuration flexibility Easier available and low stray inductance
High reliability and robustness,
Up to 1200V breakdown voltage miniaturized power side board
occupation
Integrated screw clamps Simplified and stable screwing
All power switches in a module
including NTC Compact design and cost-effective
system approach
Several current ratings available Very high power density
ACEPACK™ SMIT
Features and Benefits
Several configurations available and low
2500Vrms electrical isolation stray inductance
High reliability and robustness,
SMD assembly miniaturized power side board occupation
Dice chips on Direct Bond Copper (DBC) Compact design and cost effective system
substrate approach
Reduced parasitic inductance Very high power density
and capacitance
Ideal to realize a complete system
Suitable for several switching technologies
High level of modularity
ACEPACK™ Drive
Compact Solution for Traction Inverter
Very High Power Density with Direct Cooling for EV and HEV
Main Features & Benefits
• Large output power range >200 kW
• 750V - 1200V SiC MOSFET based switch
• Improved light load power losses for extended EV
driving ranges
• Extremely low conduction losses
• Direct Cooled Copper Base Plate with pin fins
ACEPACK™ Drive
Evaluation Kit
Very High Power Density with Direct Cooling for EV and HEV
DRIVING BOARD DC-DCIntelligent Power Module Portfolio
Wide Current Range Scalability
Complete Product Portfolio
• From 1A up to 35A
• Includes ST Driver IC, MOSFET, IGBT and Diode
• Assures package compactness and thermal performanceIPMs – SLLIMMTM Family
Small Low Loss Intelligent Molded Module
SLLIMM SLLIMM SLLIMM
nano series nano 2nd series 2nd series
600V IGBT 600V IGBT 600V IGBT
500V MOSFET 600V SJ-MOSFET 600V SJ-MOSFET
1 up to 3A 3 up to 8A 8 up to 35A
NDIP (TH) SDIP2F-26L
NSDIP (SMD) N2DIP (TH) SDIP2B-26L
12.45 x 32.15 x 4.10 mm
12.45 x 29.15 x 3.10 mm 24 x 38 x 3.5 mm
20W 100W 500W 3000W
PowerSLLIMMTM 2nd Series
Product Application
• Washing machines
• Refrigerators
• Air conditioners
Switch type IGBT SJ MOSFET
• Sewing machines
Voltage rating
• Pumps
600V
• Compressor
Current capability 8A, 10A, 15A 12A, 15A, 20A, 25A, 35A 10A,15A
• Servo motors
Package SDIP2F-26L SDIP2B-26L • Any inverter system up to 3kW
Features Benefits
• TFS IGBT and SJ MOSFET • Improved thermal performances
based technologies • Best Rth value in the market 1.1 °C/W
• High current scalability • Temperature monitoring
• Full molded and DBC package • Protection embedded inside the power module
• Thermal sensor and NTC • High efficiency at low load applications
thermistor option
• Comparator, UVLO, Shutdown
20W
function 100W 3000WSLLIMMTM Nano Series
Product Application
• Small fans
• Roller shutters
• Dish washer
Switch type MOSFET IGBT MOSFET IGBT
• Compressor
Voltage rating 500 V 600 V 500 V 600 V • Pumps
Current capability 1A, 2A 3A 1A, 2A 3A • Refrigerators
Package NDIP (12.45x29.15) NSDIP (12.45x29.15)
Features Benefits
• IGBT and MOSFET based technologies • High flexibility and robustness
• Optimized voltage drop in conduction • Improved efficiency and reliability
• Through-hole (TH) and SMD packages • Package compactness
• In line or zig-zag leads • Temperature monitoring
• NTC thermistor option • Protection embedded inside the power module
• Comparator, UVLO, Interlocking function
20W 100W 3000WSLLIMMTM Nano 2nd series
Product Application
• Small fans
• Roller shutters
• Dish washer
Switch type SJ-MOSFET IGBT(planar, TFS) • Compressor
Voltage rating 600 V • Pumps
Current capability 3A, 5A 3A, 5A, 8A
• Refrigerators
Package
• Washing machines
N2DIP (12.45x29.15)
Features Benefits
• TFS IGBT and SJ-MOSFET • High flexibility, robustness and improved efficiency
• based technologies • Improved isolation voltage up to 1.5 kVrms/min
• Optimized voltage drop in conduction • Package compactness and thermal performances
• In line or zig-zag leads w/wo stand-off option • Temperature monitoring
• Slots for heatsink screw • Protection embedded inside the power module
• NTC thermistor option • High efficiency at low load applications
• Comparator, UVLO, Interlocking function
20W 100W 3000WPower Semiconductors for New Energies
Bridge and Bridgeless
Rectification On Board Charger
VoutDC
AC/DC DC-DC
9
8
New 7
New SiC Diodes Rapid Quiet Rectifiers
1 SiC Diodes
6
Thyristors RECTIFIERS
TVS
e.g. LLC topology
Soft Start ICL
9
8
7
Bridge Rectifiers
SiC MOSFET 1
Si HV MOSFET 6
(M5, DM6, DM2)High-Voltage Power MOSFET
Breakdown Voltage
Superjunction Technology
600V 650V 800V – 1700V
MDmesh series
M2 M6 DM2 DM6 M5 DM2 DM6 K5
Focus Applications
Flyback, Flyback, Half/full bridge
Half/full bridge Hi-end-power PFC Half/full bridge Half/full bridge ZVS,
PFC/LLC PFC/LLC high ZVS, LLC and hard
efficiency topologies, topologies, ZVS, LLC high efficiency Flyback topology
resonant high
resonant ZVS, LLC switching LLC topologies LED driver, LED
converter – Solar, Server, efficiency High power level High power level lighting, auxiliary
Charger converter – topologies
Telecom SMPS topologies Solar, Server, Solar, Server, SMPS
adapters Led Charger Solar, Server,
Solar, Server, Telecom SMPS Telecom SMPS
lighting adapters Telecom SMPS
Telecom SMPSHigh-Voltage MOSFET
Series
Ron in package
5Ω
1.8 Ω
MDmeshTM M6
1.55 Ω
1.3 Ω
MDmeshTM MDmeshTM K5
DM2
480 mΩ
380 mΩ
MDmeshTM M2
100 mΩ
80 mΩ MDmeshTM
M5
42 mΩ MDmeshTM
DM6
40 mΩ
36 mΩ
20 mΩ
15 mΩ
Breakdown Voltage
400V 550V 600V 650V 700V 800V 1500VMDmeshTM Technology Overview
High-Voltage MOSFETs
MDmeshTM M5 (550V ÷ 650V) MDmeshTMK5 (800V ÷ 1700V)
Permits reduction of switching losses and targets Allows operation over very-high voltage range
higher power density
Enablers for High Efficiency
Enabler for High-Power PFC
MDmeshTM M2/DM2 (600V ÷ 700V) MDmeshTM M6/DM6 (600V ÷ 700V)
Optimized switching characteristics with very low Allows higher levels of efficiency (Platinum, Titanium)
turn-off switching losses, suitable for most high- Due to its ideal performance – Saves Energy to
frequency converters achieve climate goals
Enabler for FlyBack Enablers for ConvertersMDmeshTM M6:
New Super-Junction MOSFET Family
600V - 650V - 700V MDmeshTM M6: Advance in high-efficiency topologies
The ideal switch to boost efficiency
• Latest HV MOSFET (600V - 650V - 700V)
series
• Targeted for ZVS & LLC Bridge topologies
• Improved Efficiency at light load conditions
Power Telecom Solar
Management PowerMDmeshTM M6:
Technology Features for Resonant Converters
• New diffusion process and the optimization of
MDmeshTM M2
• Thermal SPICE model also available on web
• Optimized diffusion process to enhance resonant
converter performance
Optimized threshold voltage Optimized Coss Low gate charge
Reduced switching losses Increase Power Efficiency at light load High-frequency operationbest efficiency andMDmesh TM M6:
device’s temperature
Advantages in Resonant Topologies
92.0 System Power Efficiency
91.5
91.0 QHS
Power Eff. (%)
90.5
90.0
89.5
89.0 QLS
88.5
88.0
100 150 200 250 300 350 400 450 500 550 600
Power Out (W)
STF24N60M6 Competitor
STF24N60M6 Best Efficiency and Tcase Across Load STF24N60M6 C1
Parameters
C1 * BVdss min (V) 600 600
* RDS(on)max
190 180
(mΩ)
*VGS(th) typ (V) 4 3.5
+ 72%
STF24N60M6 * Datasheet values
Average of the Tcase values measured on two couples of the same p/nAlready on WEB
MDmesh™ M6
Promotion
600 to 700V MDmesh™ M6 600V – 650V – 700V BVdss rated
PORTFOLIO available
on your mobile600V & 650V IGBTs Series
in Trench Gate Field Stop
Higher performances in home appliances as well as high frequency converter
Best Trade-off Static-Dynamic
Characteristics
Max junction temperature of 175˚C
Tail-less switching off waveforms
Very fast freewheeling diode for very
low Eon
* Enlargement in development≥1200V IGBTs Series
in Trench Gate Field Stop
For rugged, efficient and reliable industrial power drives and more
Best trade-off Static-Dynamic Characteristics
Max junction temperature (Tj max) of 175˚C
From 2 up to 100 kHz
Very fast freewheeling diode optionSTripFET™ F7
40-100V Power MOSFET Technology
Key Characteristics Application
• Among the best RDS(on) in the market • Power Tools • Adapter/Battery
• Minimal RDS(on) x Qg (FoM) • Fork Lifts Charger
• Low input capacitances • Electric Light • UPS
• Optimized Crss/Ciss capacitance ratio Transportation • Solar Inverter
• High avalanche ruggedness • TELECOM and • Lighting/Display
• Low intrinsic diode recovery charge SERVER
• SMPS
Features Benefits
• Extremely Low Rds(on) • Low conduction losses
• Optimized body diode (low Qrr) • Excellent switching performance (higher efficiency)
• Intrinsic capacitances (Optimal capacitance Crss/Ciss • No EMI issue
ratio) • A more complete solution provided to the customer
• ST provides several package solutions, including
PowerFLAT 5x6 and H2PAK
20W 3000WSTripFET™ F8
Applications 30-150V Power MOSFET for High End > 500KHz
• Power Tools
• SMPS
• Fork Lifts
• Adapter/Battery Charger
• Electric Light
• UPS
Transportation
• Solar Inverter
• Telecom and Servers
• Lighting/Display
Features Benefits
• Lower RDS(on) x Area (-40% Vs. F7) • Reduced conduction power losses
• Extremely Low Qg/Qgd • Reduced switching losses and passive sizes
• Qrr & Soft switching F7 like • Reduced noise immunity
• Extremely low thermal resistance • Improved current capability and power dissipation
• Low EMI & turn on losses
• Extended package offer to enhance silicon performance
20W 3000W
3000W650V-1200V G2 SiC Rectifiers for EV
SiC 650V G2 and 1200V Technology: using JBS (Junction-Barrier Schottky)
Soft switching VF
behavior
Bipolar behavior
Low forward
conduction losses
Low switching losses
Schottky behavior
High forward
surge capability
High power
integration
The addition of P+ implantation in the Schottky structure creates P/N junctions.The IF
surge forward current capability can be increased while keeping TJ < TJ(MAX)650V-1200V G2 SiC
Superior performances vs competition
8 240 ° C 60A
7 VF(V)
6
5 200 ° C 40A
TJunction
4
3
160 ° C 20A
2
1 IF(A)
0
120 ° C 0A
0 5 10 15 20 25 30 35 40 45 5ms 10ms 15ms 20ms 25ms 30ms
Time
SUPERIOR FORWARD SURGE CAPABILITY SMALLER TEMPERATURE SWING
More efficient clamping effect vs. best Competitor Better clamping effect and lower VF reduces
the Tjunction during transient phases in the
application.
ST Best Competitor
1000W PFC start-up Pspice simulation
90V, 70kHz, Cout = 600µF, L = 270µH, Tc = 125°C650V SiC Diode Portfolio
Extend Package Portfolio with Flat Package
TO247 TO-220 TO-220I D2PAK DPAK
Low VF High Surge Capability
40A STPSC40065C
20A STPSC20065 STPSC20H065C
PowerFLAT™ 8x8 HV
STPSC16H065
16A STPSC16H065C
IFAV (A)
STPSC12H065
12A STPSC12065
STPSC12H065C
10A STPSC10065 STPSC10H065
STPSC8H065
8A STPSC8065
STPSC8H065C
6A STPSC6H065
4A STPSC4H065
650VAG Thyristors for EV Charging
In-rush current limiting SCR for OBC
Features TN5050H TN3050H
VDRM / VRRM 1,200V over TJ range
Max TJ -40oC to +150oC Eliminate
Relay
VDSM / VRSM 1300V 1400V
ITRMS (TC=125oC) 80A 30A A
A
K
ITSM (10ms,25oC) 580A 300A A
G
Design Value VTO (150oC) 0.88V 0.88V
K
A
G
• AEC-Q101 PPAP Available on request RD (150oC) 6 m 14 m
• High switching life expectancy
IGT (25oC) 10 to 50 mA 10 to 50 mA
• Enable systems to resist 6kV surge
• High speed power up / line drop recovery dV/dt (800V-150oC) 1 kV/µs
A smart way to turn on your systemST Fast Rectifier for EV Charging
ST Rectifiers for Input Bridge & Output Resonant
STBR: Lower VF / Lower drop STRQ: QRR better by factor of 2 and Soft
switchingExisting Isolation Technologies
Isolation technologiesgapDRIVETM: Galvanically Isolated Gate Driver
Galvanically Isolated Gate Driver technology
The STGAP1S galvanically isolated gate driver features
• Automotive (Hybrid\Electric advanced controls, protection and diagnostics.
Vehicles)
• Motor Control
• DC/DC Converters
• Battery Chargers • CONTROL: A SPI interface to enable, disable and configure several features
Optimize your driving conditions.
• Industrial
• 600/1200V Inverters
• PROTECTION: Several features to mange anomalous conditions (OCP,
DESAT, 2LTO, VCE_Clamp) and to prevent them (UVLO, OVLO, ASC,
• Automation, Motion Control
MillerCLAMP)
• Welding
• DIAGNOSTIC: The SPI interface allows access to registers containing
• Power Conversion information about the status of the device.
• Solar Inverters
• UPS Systems
• AC/DC, DC/DC Converters
Main Applications
• Windmills
Industrial Drive EV / HEV
• Home/Consumer
• Induction Cooking
• White goodsSTGAP1S – Main Features
Galvanically Isolated Gate Driver technology
AEC-Q100 grade 1
Wide operating range (-40°C -125°C)
+
SPI Interface
Parameters programming and diagnostics
Daisy chaining possibility
+
Advanced features
5A Active Miller clamp, Desaturation,
2-level turn-off, VCEClamp, ASC
+
Short propagation delay
(100 ns typ.; 130 ns max over temperature)
5A sink/source current
+
Fully protected – System safety High Voltage Rail up to 1.5 kV
UVLO, OVLO, Over-Current, INFilter, Positive drive voltage up to 36V
Thermal Warning and Shut-Down Negative Gate drive ability (-10V)
+ +STGAP1S Isolation Characteristics
Conforms with IEC60664-1, IEC60747-5-2 and UL1577 standards
Parameter Symbol Test Conditions Characteristic Unit
Maximum Working isolation Voltage VIORM 1500 VPEAK
Method a, Type and sample test
VPR = VIORM × 1.6, tm= 10 s 2400 VPEAK
Partial discharge < 5 pC
Input to Output test voltage VPR
Method b, 100% Production test
VPR = VIORM × 1.875, tm = 1 s 2815 VPEAK
Partial discharge < 5 pC
Transient Overvoltage VIOTM Type test; tini = 60 s 4000 VPEAK
Maximum Surge isolation Voltage VIOSM Type test; 4000 VPEAK
Isolation Resistance RIO VIO = 500V at TS > 109 Ω
Isolation Withstand Voltage VISO 1 min. (type test) 2500\3536 Vrms\ PEAK
Isolation Test Voltage VISO,test 1 sec. (100% production) 3000\4242 Vrms\ PEAK
Parameter Symbol Value Unit Conditions
Creepage Measured from input terminals to output
CPG 8 mm
(Minimum External Tracking) terminals, shortest distance path along body
Comparative Tracking Index
CTI ≥ 400 DIN IEC 112/VDE 0303 Part 1
(Tracking Resistance)
Isolation group II Material Group (DIN VDE 0110, 1/89, Table1)650V &1200V SiC MOSFETs
The real boost for efficient designs
Lower Losses, High Efficiency, Reduced Footprint: Breakthrough in High-Voltage Converters
• Leading to new technology platform with awesome Figure Of Merit
• Very low on-state resistance
• 200oC Max junction temperature
• Very fast and robust intrinsic body diode
• Industrial and Automotive Grade qualified
• Outstanding system efficiency and reduced cooling requirements
Applications
• Traction inverters • Auxiliary power supplies
WBG and Si • On board chargers • UPS
• DC-DC converters • Solar
• SMPS • WeldingMOSFET RDS(on) Figure of Merit at TJ=150ºC
30x
5.8x
Rated Blocking Voltage (V)RDS(on) Variation with Temperature
1200V SiC MOSFET
2.60
2.40
2.20
Normalized RDS(on)
57% lower
2.00
1.80
1.60
33% lower
1.40
1.20
1.00
SCT30N120
0.80
0 25 50 75 100 125 150 175 200 225
°C
ST (SiC) Nearest Comp. (SiC) Silicon MOSFET (900V)
ST is the only supplier to guarantee max Tj as high as
200°C in plastic packageWhy Silicon Carbide?
It’s all about the Bandgap
Silicon Carbide allows Power Devices to go beyond the limits of Silicon...
Higher
Operating
Higher Temperatures
Higher Speeds
Lower
Energy Voltages
Smaller Losses
Size
...and makes high-voltage power-applications smarterChallenges for Silicon Carbide
Technical Manufacturing Capacity
Defectivity Reliability
Buried SFS
Triangle SFS
Macro-steps
PIT = MPST Silicon Carbide
20-Year History
April 1998 November 2003 May 2004 March 2009 September 2014
1st contract on SiC First ST internal Schottky Diode Power MOSFET 1st Gen MOSFET
with CNR-IMETEM product request Demonstrator 3" Demonstrator Start Production
(Dr. V. Raineri) (ST line)
February 2003 October 2007 May 2012 June 2017
ETC Epitaxial 1st Gen Diode 2nd Gen Diode 2nd Gen MOSFET
reactor prototype Start Production Start Production AG 6" Start
installed in ST Production
June 1996 May 2002 December 2005 June 2014
Collaboration with Schottky Diode Schottky Diode 3rd Gen 3 Diode
Physics Dept. Demonstrator Mat 20 Start Production
(Prof. G. Foti) (CNR line)
1996 1998 2000 2002 2004 2006 2008 2010 2012 2014 2016…
June 2003 June 2006 June 2011 June 2016
2" ST line 3" ST line 4" ST line 6" ST line
Pioneers... ...to mass productionSiC MOSFET Facts at Glance
Front-end Evolution Package offer - Discrete - Mini-module - Modules
x2 shrink Continuous Discrete Packages
x4 shrink
1st Gen Shrinkage
HU3PAKTM
[Ron x cm2]
Planar
2nd Gen
Bare Dice Strategic offer for Key Players
In Production
Planar 3rd Gen
Planar
Sampling 2019 4th Gen
Production 2020 Trench
Prototypes 2020 SiC Module focus for Largest Market
SiC adoption faster than expected In Production Ramp-up by H1’19
x3 STPAKTM ACEPACKTM SMIT
x6
Production 2020
ACEPACKTM 1
ACEPACKTM DRIVE
2017 2018 2019 650 V to 1200 V
Units shipped per year MOSFETs and DIODEs Production 2020
ACEPACKTM 2Traction Inverter
Advantages of SiC in Traction Inverters
Drive Train Electrification : Enabled by SiC Technology
Silicon IGBT SiC
+ Diode MOSFET Traction Inverter - End User Value Proposition
Die area for 100A nominal current Power Semiconductors size:
[mm2] 150 30
Up to 70% smaller Up to
75%
Cooling System:
Max Junction temperature [°C] 175 200 Up to 70% smaller
Overall
size
Normalized switching Passive Components: reduction
energy 8 1 Up to 80% smaller (**)
Normalized Power Loss(*)
(Typical Mission profile) 7 1 Up to 10% Mileage Extension
Average junction temperature at
nominal power [°C] (*) 100 80 Extended life in use
1200V
(*) 210kWpeak, 350Arms peak, 200Arms continuous Traction Inverter, 750V bus, fPWM=10kHz, Tfluid = 60°C
(**) applicable to High Power DC to DC converter when presentSi IGBT vs. SiC MOSFET – 1200V
Silicon Solution: IGBT+ Diode Vbus = 750V, 200kW peak !!
5x smaller
4x100 mm2 + 4x50 mm2
semiconductor area
SiC MOSFET gen 3
Solution:6x20 mm2
200Arms
DC-link voltage: 750Vdc , Switching frequency: 10 kHz, Tfluid = 65°C, mi=0-5
From 3.5 to 10% higher efficiency
250 miles 250 miles
200Arms
Si IGBT SiC MOSFET
Lower temperature for higher reliability Higher efficiency for extra mileage
350Arms peak – 210kW, 200Arms nominal, DC-link voltage: 750Vdc , Switching frequency: 10 kHz, Tfluid = 65°CSiC MOSFET System Benefits – 1200V
Reducing PCU size
1200V IGBT based solution
5xsmaller Power module size Cooling system size DC link PCB
cooling
system 20% 50% 15% 15%
With 1200V
6 10 10
10%
% % %
• 200Arms continuous
• DC-link voltage: 750Vdc
• Switching frequency: 10 kHz
• Tfluid = 65°C Up to 70% smaller PCUTraction Inverter
Advantages of SiC in Traction Inverters
Drive Train Electrification : Enabled by SiC Technology
Silicon IGBT SiC
+ Diode MOSFET Traction Inverter - End User Value Proposition
Die area for 100A nominal current Power Semiconductors size:
[mm2] 100 26
Up to 60% smaller Up to
50%
Cooling System:
Max Junction temperature [°C] 175 200 Up to 50% smaller
Overall
size
Normalized switching Passive Components: reduction
energy 6 1 Up to 60% smaller (**)
Normalized Power Loss(*)
(Typical Mission profile) 4 1 Up to 6% Mileage Extension
Average junction temperature at
nominal power [°C] (*) 100 90 Extended life in use
750V
(*) 170kWpeak, 525Arms peak, 300Arms continuous Traction Inverter, 400V bus, fPWM=10kHz, Tfluid = 65°C
(**) applicable to DC to DC converter when presentSi IGBT vs. SiC MOSFET – 750V
Silicon Solution: IGBT+ Diode
3x100 mm2 + 3x50 mm2 ~4x smaller Vbus = 400V 160kW peak !!
semiconductor area
SiC MOSFET gen 3
Solution:6x20 mm2
300Arms
DC-link voltage: 400Vdc , Switching frequency: 10 kHz, Tfluid = 65°C, mi=0-5
From 2 to 4% higher efficiency
MILES MILES
300Arms 250 250
Lower temperature for higher reliability Si IGBT SiC MOSFET
525Arms peak – 170kW, 300Arms nominal, DC-link voltage: 400Vdc , Higher efficiency for extra mileage
Switching frequency: 10 kHz, Tfluid = 65°CSiC MOSFET System Benefits – 750V
Reducing PCU size
2x smaller 750V IGBT based solution
cooling
Power module size Cooling system size DC link PCB
system
20% 50% 15% 15%
With 750V SiC
8 10 10
25%
% % %
• 300Arms continuous
• DC-link voltage: 400Vdc
• Switching frequency: 10 kHz
• Tfluid = 65°C Up to 50% smaller PCUOn-board Charger
Case Study 11kW, 3-Phase OBC
SiC Advantages in On-Board Battery Chargers
Silicon IGBT SiC MOSFET
+ Diode + Diode OBC - End User Value Proposition
Losses [W] 300 216 Reduce heatsink size
Switching Frequency [kHz] 25 100/150 Reduce passive component size 60%
weight,
volume
Volume* [cm3] 4593 1986 reduction
Reduce congestion and decrease car
weight
Weight* [g] 7708 3074
Efficiency** [%] 96.9 97.7 Higher Efficiency
*including heatsink , passive components, switches, filters
**only due to semi-conductor componentsSTPAKTM: Multi-Sintering Package
Ideal for Electric Vehicle applications
High Power Density for Traction Inverter
Main Features & Benefits
• Multi sintering solution for better performance and
higher reliability
• AEC-Q101 qualified, Tj (max) =175°C
• 650V / 1200V Voltage rated
• Suitable for silicon IGBT and SiC Power MOSFET
technologies
Example application
• Compact and modular design approach
• High power density
• Improved thermal performance due to direct sintering
to the bottom of the heatsink
• Sense pin for enhanced controlST Silicon Carbide Manufacturing Evolution
Catania 6” wafer size capacity
600
6’’ Wafers/Week - Normalized Capacity
500
Catania Manufacturing Site
400
300
545
485
200 416
341
265
100 182
152
100
0
2018 2019 2020 2021 2022 2023 2024 2025
June June 2006 June SiC Transparent Wafers
2003 3" ST line 2016
2" ST line 6" ST line
Pioneers..
June 2011
4" ST line
2003 – 2” 2006 – 3” 2011 – 4” 2016 – 6”
line startup line startup line startup line startupSiC-Substrate Supply-Management Strategy
• Current Suppliers 54
• 4 Suppliers already qualified and in full production
• LTA already finalized with a key supplier:
Cree and STMicroelectronics Announce Multi-Year Silicon Carbide Wafer Supply Agreement
Agreement to boost commercial expansion of SiC in automotive and industrial applications
DURHAM, N.C. and GENEVA /07 Jan 2019
Cree, Inc. (Nasdaq: CREE) announces that it signed a multi-year agreement to produce and supply its Wolfspeed® silicon carbide (SiC) wafers to STMicroelectronics
(NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications. The agreement governs the supply of a quarter billion
dollars of Cree’s advanced 150mm silicon carbide bare and epitaxial wafers to STMicroelectronics during this period of extraordinary growth and demand for silicon
carbid e power devices.
“ST is the only semiconductor company with automotive-grade silicon carbide in mass production today, and we want to press forward to grow our SiC business both in
terms of volume and breadth of applications served, targeting leadership in a market estimated at more than $3B in 2025,” said Jean-Marc Chery, president and CEO of
STMicroelectronics. “This agreement with Cree will improve our flexibility, sustain our ambition and plans, and contribute to boosting the pervasion of SiC in automotive
and industrial applications
• Long term Plan (Toward a full Vertically Integration)
• A strategic partnership with a new Supplier has just been closed (beg 2019) :
STMicroelectronics to Acquire Majority Stake in Silicon Carbide Wafer Manufacturer Norstel AB
Acquisition will extend ST’s silicon carbide ecosystem and strengthen ST’s flexibility to serve fast growing automotive and industrial applications
Geneva, Switzerland / 06 Feb 2019
STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has signed an
agreement to acquire a majority stake in Swedish silicon carbide (SiC) wafer manufacturer Norstel AB (“Norstel”). After closing, ST will control the entire supply chain for a
portion of its SiC devices at a time of constrained global capacity and positions itself for a significant growth opportunity. ST will acquire 55% of Norstel’s share capital, with an
option to acquire the remaining 45% subject to certain conditions, which, if exercised, will result in total consideration of $137.5 million, funded with available cash.SiC Technology Summary
6” wafer production and EPI
process step in-house in ST
AEC- Automotive Grade
Q101
• Battery Electric Vehicles are disrupting the
MOSFET and Diode products automotive market
available and significantly growing • SiC Technology enables an optimized total cost of
for 1200V and 650V ownership model, for both automotive ( traction
Inverters on-board chargers) as well as Industrial
Bare Die, Discrete Package (Solar, UPS, energy storage) domains
and Module offer
• Introducing the new material in Automotive is
challenging but our experience shows it’s manageable
Standard product offer
and customized solutions • Ramp up of SiC Technology in STMicroelectronics is
much faster than market expectationGallium Nitride (GaN): a new member of
ST's Wide Band-Gap family
Enables increased power density, higher frequency operation and improved efficiency
First product under development: PowerFLATTM 8x8 Key Benefits
SGT120R65ALD* • Main breakthrough for High-Voltage Power conversion
• Compact Design
Product Features
RDS(on) = 120 mΩ @10 A • Smaller form factor and increased Power density
BVdss > 650 V
Kelvin pin for optimized Conventional adaptor based Adaptor based on GaN
on Silicon switch* switch
Gate Driving
5cm
Package section Top Side Cooling
3cm
12cm
*Under Development *Super Junction power MOSFETST App finder
MOSFET
IGBT
Brand new finders, to allow an easier and faster recollect of the most important
information about any power transistor in ST’s portfolio.www.st.com/stpower
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