Radiation Sensors at High Temperature using Diamond Detectors - Indico

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Radiation Sensors at High Temperature using Diamond Detectors - Indico
Radiation Sensors at
High Temperature using
Diamond Detectors

Peter R Hobson
Particle Physics Group
Department of Electronic & Computer Engineering
                                                  Single crystal diamond sensor at Brunel
Brunel University London, Uxbridge, UB8 3PH UK    University London.

2 March 2018

Brunel University London
Radiation Sensors at High Temperature using Diamond Detectors - Indico
Motivation                                                                              2 March 2018

 In the context of this talk “High” temperature is above about 170 °C
 Two key application areas motivate the work discussed in this talk
                 1) Radiation monitoring near high temperature regions of nuclear power plant
                 2) Deep oil and gas well logging – uHPHT* definition in the UK has T > 166 °C

 Key challenges are potentially different in these two applications
                 1) Long life needed (> ten years), high total dose, high temperature
                 2) Short life acceptable (< few thousand hours), moderate dose, high temperature
                 + pressure + vibration [1]

* Ultra High Pressure High Temperature (see DECC (2010) OT21410)
[1] Proc. 2010 IEEE Nucl. Sci. Symp. Conf. Rec. (NSS/MIC), 2010, pp. 1214–1219

 Brunel University London                                                                           2
Radiation Sensors at High Temperature using Diamond Detectors - Indico
Outline of talk                             2 March 2018

• Diamond as a radiation sensor
• Recent results on diamond radiation
  sensors at high temperatures
• Recent results on other wide band-gap
  materials
• Prospects and challenges for the future

Brunel University London                               3
Radiation Sensors at High Temperature using Diamond Detectors - Indico
Diamond                                                                                             2 March 2018

A wide band-gap material (Eg = 5.5 eV).
Electron and hole mobilities of about 4500 cm2V–1s–1 and
3800 cm2V–1s–1, respectively, in intrinsic, single-crystal
CVD diamond at 293 K [2].
Can be doped p-type (B with 0.37 eV activation energy) or
n-type (N with 1.7 eV activation energy).                       Rob Lavinsky, iRocks.com – CC-BY-SA-3.0
                                                                [CC BY-SA 3.0
                                                                (http://creativecommons.org/licenses/by-
Available in natural (type II relevant here), polycrystalline   sa/3.0)], via Wikimedia Commons
(pCVD) and mono-crystalline CVD.
Different grades are commercially available – heatsink,
optical, electronic.

[2] Isberg, J., et al., Science (2002) 297, 1670                By Kugel (Own work) [CC BY-SA 3.0
                                                                (https://creativecommons.org/licenses/by-sa/3.0)
                                                                or GFDL (http://www.gnu.org/copyleft/fdl.html)],
                                                                via Wikimedia Commons

Brunel University London                                                                                           4
Radiation Sensors at High Temperature using Diamond Detectors - Indico
A solid state ionisation detector                                         2 March 2018

     High resistivity material, typically ~ 200 µm in thickness

     Large displacement energy of 42 eV/atom (almost twice that for Si) should
     lead to excellent radiation tolerance.

     Figure from Mikuz M et al, POS(ICHEP2012) 524

Brunel University London                                                             5
Radiation Sensors at High Temperature using Diamond Detectors - Indico
Diamond                                                                                                     2 March 2018

A great deal of research, motivated particularly by the
challenges posed by the environment of the Large Hadron
Collider at CERN, have demonstrated the generally excellent
radiation tolerance of recent CVD diamond (e.g. RD42
collaboration [3])
Recent results from RD42 [4] indicate:
Charge Collection Distance: routinely > 300 µm
“Average signal pulse height of pCVD diamond detectors
irradiated up to the dose of 5×1014 neutrons cm-2 does not
depend on the particle flux up to 10 MHz.cm-2”
“The successful operation of the first pCVD diamond planar
pixel device in an LHC experiment [ATLAS Diamond Beam
Monitor]”

[3] W. Adam, et al. [RD42 Collaboration]. Development of Diamond Tracking Detectors for High Luminosity Experiments at
the LHC. Proposal/RD42 CERN/DRDC 94-21, Status Report/RD42, CERN/LHCC, 95-43, 95-53, 95-58, 97-03, 98-20,
2000-011, 2000-015, 2001-002, 2002-010, 2003-063, 2005-003, 2006-010, 2007-002, 2008-005
[4] Alexopoulos A. et al PoS Vertex 2016 (2017) 027
Brunel University London                                                                                                 6
Radiation Sensors at High Temperature using Diamond Detectors - Indico
2 March 2018

Recent results on diamond radiation sensors at high
temperatures

Some published (and some preliminary) results from Brunel
University London.
Some published results from the University of Surrey.
Some published results from other groups.

Brunel University London                                           7
Radiation Sensors at High Temperature using Diamond Detectors - Indico
Brunel University London
This work was funded by EPSRC and was in collaboration with Micron Semiconductor Ltd (UK)
via a linked TSB project [5]
Our results shown here use single-crystal electronic grade CVD diamonds (2×2×0.5 mm3)
sourced from Element Six.
We worked with Schlumberger (92140 – Clamart, France) to provide the down-hole oil well
logging expertise.

                                                                                                    2048
                                                                                                    channel
                                                                         2021                       MCA
                                                  4004
   2.0                                            Pre-                   Spectroscopy
   mm                                             amp                    amp (4µs)

                                    Readout electronics (Canberra) at room temperature
 Ctotal = 3.1 pF
 Cdiamond = 0.5 pF                  Sensor exposed to alpha sources (241Am, 244Cm, 239Pu)
 Rtotal > 200 GΩ                    inside a vacuum chamber at < 10-5 mBar

[5] High Temperature Radiation Hard Detectors (HTRaD): Grant EP/L504671/1 and TSB Project #101427
Brunel University London                                                                                      8
Radiation Sensors at High Temperature using Diamond Detectors - Indico
2 March 2018

    Single crystal diamond sensors - characteristics

                                                                                  1E-13
 6E-11
                                                                                  1E-13

                                                                                     Leakage current (A)
      Leakage current (A)

 8E-11                                                                            3E-13
                                                                                  5E-13
 1E-10                                                                    0V to 7E-13
                                                                          100V                                                            0V to 100V
                                                                          100V to9E-13
1.2E-10                                                                   0V 1.1E-12                                                      100V to 0V
                                                                          0V to -
                                                                          100V 1.3E-12                                                    0V to -
1.4E-10                                                                                                                                   100V
                                                                               1.5E-12
1.6E-10                                                                        1.7E-12
       -100                           -50      Applied0bias (V)     50             100 -100                      Applied0bias (V)
                                                                                                           -50                      50         100

                            Ohmic behaviour for metallisation “A”                               Weakly rectifying behaviour for metallisation “B”

                                                     Raman           Raman
                                                       Peak        peak width
                            Crystal    Ra(nm)
                                                     positon           at             Surface roughness (Ra) and
                                                     (cm^-1)      1332(cm^-1)         principle Raman peak position
                            BSC-1     4.51          1330.64       6.01
                            BSC-2     5.19          1330.06       4.53
                                                                                      and width for four different E6
                            BSC-3     4.53          1329.50       2.65                diamonds of dimensions
                            BSC-4     5.15          1330.65       2.66                2x2x0.5 mm3

    Brunel University London                 Presentation Title                                                                                        9
Radiation Sensors at High Temperature using Diamond Detectors - Indico
Brunel data on repeatability                                                                                      2 March 2018

Preminary!
 Four nominally identical E6 SC diamonds (electronic grade, 2x2x0.5 mm3)
 were identically coated and their IV characteristics measured. One
 diamond, BSC-5, was plasma etched to provide a micro patterned surface
 (for neutron converter layer efficiency gain)
                                     Raman Peak
                                                     raman peak width
   Crystal       type      Ra(nm)   postion (cm^-
                                                       at 1332(cm^-1)
                                          1)
                E6 ESC
 BSC-5           (grid     5.38     1332.55          2.21
                etched)
                E6
 BSC-6
                ESC        5.78     1332.88          2.07
                E6
 BSC-7
                ESC        5.24     1332.40          2.22
                E6
 BSC-8
                ESC        8.06     1332.23          2.07
                                                                         Current (pA)
                                              Sensor    at 0V     Δ 0V to 100V         Δ 0 v to -100V      Contact Behaviour
                                                                   1.43E+05                             Double Schottky,
                                              BSC5      -131.3                     -2.47E+05 (-247nA)
                                                                    (143nA)                             symmetrical hysteresis
                                              BSC6      -130.1        22.5                  -17.1       Ohmic
                                              BSC7      -129.5        42.4                  -55.7       Ohmic
                                                                                                        double Schottky,
                                              BSC8      -128.9          749.1            -648.8
                                                                                                        asymmetric hysterisis
Brunel University London                                                                                                   10
IV behaviour (room temperature)                                                                                                         2 March 2018

    Preliminary

                                  B-SC-6                                                             B-SC-8
 1E-10
                                                                    7E-10
      Leakage current (A)

                                                                        Leakage current (A)
1.1E-10
                                                          0V to
1.2E-10                                                   100V      2E-10
                                                          100V to
1.3E-10                                                   0V
                                                          0V to -                                                            0V to 100V
                                                                    3E-10                                                    100V to 0V
                                                          100V
1.4E-10                                                                                                                      0V to -100V
                                                                                                                             -100V to 0V
1.5E-10                                                             8E-10
       -100                 -50   Applied0bias (V)   50    100           -100                  -50   Applied0bias (V)   50            100

                                  Ohmic                                                       Schottky with hysteresis

    Brunel University London                                                                                                                          11
High temperature results - Brunel                                       2 March 2018

   Conductive epoxy: Duralco 120 from
   Cotronics Corp.
   PCB: 1mm thick Rubalit 708S from
   CeramTec GmbH.
   Cable: 50Ω coaxial rated at 250 °C

Heating of the sensors was accomplished using a copper block with an attached
AlN heater element and Pt-100 thermometer within the chamber. This was
attached by multi-way vacuum feedthrough to an external temperature controller
(Lakeshore 331). Electronic readout of the system was carried out by
connecting internally with coaxial cable to vacuum feed-through connectors.

Brunel University London                                                         12
Brunel results ~ 20 °C                                                                                             2 March 2018

Simulations shown used FLUKA 2011 [6]. Graphs are as shown in reference [7].
[6] FLUKA: a multi-particle transport code“ A. Ferrari, P.R. Sala, A. Fasso`, and J. Ranft, CERN-2005-10 (2005),
INFN/TC_05/11, SLAC-R-773
[7] A. Metcalfe et al 2017 JINST 12 C01066

Brunel University London                                                                                                    13
Brunel results ~ 20 °C to 250 °C                    2 March 2018

                      + 300 V bias   - 300 V bias

Brunel University London                                     14
2 March 2018

Brunel results on CCE and energy resolution
                           + 300 V bias for BSC6                           - 300 V bias for BSC6

                                                                 Energy           Count rate vs rate at
    Detector        Bias            Mode   Peak Temp   CCE (%)   Resolution (%)   30C (%)
    BSC6                       300 Hole            225 99±5      1.6±0.5          21.2±0.6
    BSC6                       -300 e-             225 97±3      2.1±0.5          52.8±0.9
    BSC7                       200 Hole            200 98±2      4.0±0.7          87.0±1.2
    BSC7                       -200 e-             225 96±2      2.0±0.5          75.8±1.1
    BSC8                       300 Hole            225 98±3      3.3±0.7          31.3±0.6
    BSC8                       -300 e-             225 97±3      2.6±0.5          63.9±1.0

Brunel University London                                                                                    15
Gamma and neutron detection                                                       2 March 2018

                                                60Co  irradiation data at 1.3 mGy/s
                                                at ~ 20°C

 FLUKA simulation of neutron
 detection efficiency as a function of
 converter layer thickness

Brunel University London   Presentation Title                                              16
Micro-patterned surface                         2 March 2018

 FLUKA simulated enhancement in
 detection efficiency assuming a 10B
 converter layer.

Brunel University London   Presentation Title            17
Other studies on diamond at elevated                                                     2 March 2018

  temperatures                         2                         4.3×4.3 mm
                                                                 Ag contacts

               4×4 mm2
               Pt contacts

             Energy in keV
             241Am       source [8]
                                                            4.3×4.3 mm2
[8] Hodgson M et al, Meas. Sci. Technol. 28 (2017) 105501   Pt contacts, +200 V bias [9]
[9] Pilotti R et al, JINST (2016) C06008
  Brunel University London                                                                          18
Other studies on diamond at elevated                                             2 March 2018

temperatures

A number of other recent studies have also shown the potential of diamonds to operate as
radiation detectors at elevated temperatures. For example:
Masakatsu Tsubota et al [10] reported operation of a reconditioned DDL diamond* with Ru
Schottky and TiC/Pt ohmic contacts up to a temperature of 250 °C. At lower temperatures
(200 °C) a CCE of 96.9 % and an alpha particle energy resolution of 3% at 5.5 MeV was
demonstrated.

Amit Kumar et al [11], using 5×5 mm2 diamonds from IIa Technologies Pte, demonstrated
that with Cr/Au contacts an alpha particle energy resolution of 2% at 5.5 MeV was
obtained at 300 °C

* Sourced from E6 to my knowledge
[10] Masakatsu Tsubota et al , NIM A 789 (2015) 50
[11] Amit Kumar et al, NIM A 858 (2017) 12
Brunel University London                                                                   19
SiC radiation sensors                                                                 2 March 2018

    SiC is a wide band-gap semiconductor (Eg = 3.23 eV for 4H-SiC)

    Many applications for high power electronics (Schottky diode, JFET,
    MOSFET) and commercial products available from ST, Infineon, Cree etc.

      I will discuss data from
      work at University of
      Surrey [12, 8]

                                                      Reverse bias leakage current of
                                                      4H-SiC Schottky diode
[12] Ambubakar Y M et al , IEEE Trans Nuc Sci 62 (2015) 2360
  Brunel University London                                                                       20
SiC radiation sensors                                                         2 March 2018

   Stability with time for peak and FWHM of 241Am signal at 100 V bias [12]

Brunel University London                                                               21
SiC radiation sensors                                                               2 March 2018

                241Am source – temperature effect on count rate for two different
                SiC sensors [8]

Brunel University London                                                                     22
Prospects and challenges for the future                                               2 March 2018

The positive message is that diamond (and probably SiC) have been demonstrated to be
radiation sensors which will operate at temperatures in excess of 200 °C. Work relating to
CERN LHC experiments confirm the excellent quality and radiation tolerance of
commercially available CVD diamond.
Most published work has concentrated on measuring high energy alpha particles as many
applications are aimed at neutron detection – direct with 12C or via 10B or 6Li converters
depending on the neutron energy range.
Stability of response has been shown over moderate (~1 day) time periods.
However we are still trying to understand polarisation effects, the different responses with
different contact metals, different surface preparation techniques, the use of epi layers (or
not) on SiC and indeed self-bias (or not).

Brunel University London                                                                        23
Prospects and challenges for the future                                    2 March 2018

  High temperature packaging, and the ability to operate for long periods
  (years) and for some applications the need to survive very high shock loading
  for oil and gas well applications is still to be demonstrated.

  However the really big issue is the challenge to make low noise front-end
  electronic amplifiers which will also operate at these elevated temperatures!
  Passive components and a few operational amplifiers are now commercially
  available (though op-amp life limited to ~ 2000 hours at 200 °C), but the
  development of a low-noise JFET or bi-polar high temperature pre-amp is an
  essential next stage.

  Some UK-based work at Sheffield University and University of Sussex, for
  example, on semiconductor materials such as InGaP, AlGaAs etc. is
  promising.

  I am sure that developers of 3D diamond sensors (in the UK Manchester &
  Oxford) will be soon testing them at elevated temperatures.

Brunel University London                                                            24
Acknowledgements                                                                     2 March 2018

Many thanks to my Brunel, Micron Semiconductor and Schlumberger (Clamart)
collaborators.*
Thanks also to Annika Lohstroh (University of Surrey), Michael Hodgson (BECQ)
and Ricardo Pilotti (ITER) for permission to use their published figures.
Brunel University London diamond studies received support from EPSRC under
grant EP/L504671/1

Diamond sensors arising from the Brunel University/Micron Semiconductor
collaboration are commercially available from:
Micron Semiconductor Ltd., Lansing, BN15 8SJ UK

* Alex Metcalfe, George R. Fern, Terry Ireland, Ali Salimian, Jack Silver, David R. Smith
Gwenaelle Lefeuvre and Richard Saenger
Brunel University London                                                                      25
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