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10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
165

10

Flexible and Stretchable Devices from Unconventional
3D Structural Design
Hangbo Zhao and Mengdi Han
Northwestern University, Center for Bio-Integrated Electronics, Evanston, IL, USA

Many biological systems in nature are three-dimensional (3D), such as plant
roots, animal cells, human vascular networks, etc. The 3D feature provides
essential functions in various activities including physicochemical reactions and
interactions with the environment. Biomimetic recreation and engineering of
3D architectures inspired by nature has been a topic of increasing interest in
recent decades, especially in the area of flexible and stretchable devices. 3D
structures on such devices enable new and more complex functionalities as
compared to 1D or 2D counterparts. Moreover, the flexibility and stretchability
of the substrate provide a unique means of forming, controlling, and tuning
3D structures on it. The interplay between mechanics and structures provides
plenty of space and fascinating opportunities for the design and fabrication of
unconventional 3D structures with novel functionalities.
  In this chapter, various approaches to forming unconventional 3D struc-
tures are first introduced, from basic buckling of ribbons, membranes, and
non-coplanar bridge-island structures, to more complex deterministic assembly.
A series of strategies for extending the level of control in deterministic assembly
is discussed, followed by a collection of exemplary flexible and stretchable
electronic and optical devices fabricated using 3D deterministic assembly
methods.

10.1 Stretchable 3D Ribbon and Membrane Structures
Formed by Basic Buckling
Mechanical buckling of thin films under compressive stress provides a power-
ful route to forming 3D structures. The stretchability of elastomeric substrates
is utilized as a platform for buckling micro-/nanostructures. In this section, the
fabrication of 3D ribbon and membrane structures based on simple substrate
buckling is introduced.

Flexible and Stretchable Triboelectric Nanogenerator Devices: Toward Self-powered Systems,
First Edition. Edited by Mengdi Han, Xiaosheng Zhang, and Haixia Zhang.
© 2019 Wiley-VCH Verlag GmbH & Co. KGaA. Published 2019 by Wiley-VCH Verlag GmbH & Co. KGaA.
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
166   10 Flexible and Stretchable Devices from Unconventional 3D Structural Design

      10.1.1                3D Nanoribbons
      The John A. Rogers group from the University of Illinois Urbana-Champaign
      exploited compressive buckling to convert nanoribbons into 3D, wavy structures.
      The process starts with fabricating patterned thin, flat, single-crystal silicon rib-
      bons on a mother wafer [1]. Then, the Si elements are bound to a pre-strained
      elastomeric substrate. After peeling off the elastomer and releasing the pre-strain,
      the silicon is transformed into well-controlled, periodic wavy ribbons that are
      stretchable. Large-area, uniform-array, wavy nanoribbons can be fabricated using
      this method. The nanoribbons are highly stretchable, with a maximum strain over
      10% for both compression and stretching. A single-crystal silicon p–n diode is
      showcased as an example of applications of such wavy nanoribbons.
        The same principle of buckling nanoribbons could be applied with spatial con-
      trol over adhesion sites added to create well-controlled local displacement of the
      ribbons [2]. The fabrication process is schematically illustrated in Figure 10.1a.

      (a)                                                                                 (b)
                                                SU8 5
                                                Gold
                                                Quartz
                                                                                                                          Stretch                Compress
                    Photolithography
            (i)
                    and gold etching
                                                                                          (c)
                                                             (vi)     Cast PDMS
                                                UVO
                                                mask
                                                                                                                                                                10 μm
                      Win     Wact
                    Laminate UVO mask
            (ii)
                    against stretched PDMS
                        UV light
                                                             (v)      Release PDMS
                                                Air                                  GaAs
                                                panel
                            L + ΔL            PDMS
            (iii)
                    Expose to UV light and                               L + ΔL                                                                               100 μm
                    removal of mask
                                          Activated
                                                                      Bond GsAs ribbons
                                          surface            (iv)     to pre-strained
                                                                      PDMS

      (d)                                                                                   (e)
                                                                                                            6.0
        GaAs                                                                         Au
                                                                                                                  Stretching degree
                                                 PDMS                                                       4.0            0%
                                                                                                                        14.4%
                                                                                                            2.0         34.3%
                                                                                            Current (μA)

                                       V                          A                                                     44.4%
                                                                                                                        51.4%
                                                                                                            0.0
                                                 GaAs
                                                                                                           –2.0
                                           Infrared irradiation

                                                                                                           –4.0
                                                                                                                                            With light illumination
                                                                                                           –6.0
                                                                                                                  –0.4      –0.2          0.0          0.2    0.4
                Au/GaAs                           GaAs                      Au/GaAs                                                 Bias voltage (V)

      Figure 10.1 Buckling of semiconductor nanoribbons for stretchable electronics. (a) Schematic
      illustration of the fabrication process of 3D buckled nanoribbons. (b) Schematic of bucked
      nanoribbons in response to stretching and compression. (c) SEM image of GaAs nanoribbons
      formed. (d) Schematic and optical images of a stretchable photodetector (PD) from
      nanoribbons. (e) I–V characteristics of fabricated PDs under different stretching degrees.
      Source: Reproduced with permission from Sun et al. [2]. Copyright 2006, Springer Nature.
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
10.2 Deterministic 3D Assembly   167

An ultraviolet ozone (UVO) mask is used to pattern the surface chemistry on
a poly(dimethylsiloxane) (PDMS) substrate, where bonding between the Si or
GaAs nanoribbons and PDMS substrate only occurs in lithographically defined
regions. The buckled nanoribbons could be embedded in PDMS and undergo
extremely high levels of stretching (up to ∼100%), compression (up to ∼25%),
and bending (with curvature radius down to ∼5 mm), as shown in Figure 10.1b.
  Such stretchable ribbons could be used in the construction of metal–semi-
conductor–metal photodetectors, as shown in Figure 10.1c–e. The I–V charac-
teristics of the photodetectors are mechanically tunable due to the change of the
projected area of the buckled GaAs ribbons.

10.1.2   3D Nanomembranes
In addition to nanoribbons, nanomembranes could also be engineered into 3D
configurations using buckling. As shown in Figure 10.2, a silicon thin film, ini-
tially on a mother wafer, is transferred to a biaxially pre-strained PDMS slab.
After the release of the strain of PDMS, wavy Si nanomembranes are formed with
controllable surface topologies.
   The formed wavy Si nanomembranes are stretchable, and yield various
morphologies in response to different strains applied at different orientations, as
shown in Figure 10.2b. These wavy membranes provide a useful path to biaxially
stretchable devices.

10.1.3   3D Bridge-Island Structures
More complex structural configurations are achievable by combining ribbons
with island-like 2D structures. Figure 10.3 shows an example of non-coplanar,
bridge-island structures [4]. The ultrathin circuit mesh fabricated using standard
semiconductor fabrication is bound to pre-stretched PDMS at the positions of the
flat islands, via ozone surface treatment. Using this strategy, an array of comple-
mentary metal–oxide–semiconductor (CMOS) inverters is fabricated and encap-
sulated with PDMS (Figure 10.3b). The fabricated device offers extremely high
stretchability, with stretching strain up to ∼140% and twisting pitch as tight as
90∘ in ∼1 cm (Figure 10.3c).
  The feature size of the stretchable circuit is comparable to conventional 2D
devices, while no significant changes in electrical properties are observed owing
to the high stretchability of the PDMS substrate and mechanics-guided structural
design.

10.2 Deterministic 3D Assembly
While the basic buckling approaches described in Section 10.1 are effective
in transforming 2D patterns into 3D configurations, the accessible structures
are limited to wavy ribbons, membranes, and combinations of them. In this
section, a more complex 3D assembly approach is introduced, namely, deter-
ministic 3D assembly. Deterministic 3D assembly combines lithographically
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
Fabricate thin Si membrane film

                                                                (i)             (ii)                     (iii)

                                      Mother wafer
                                                                                                                                Stretching strain

                                                                                                                                εst = 0%
                            Contact and transfer to
                            pre-strained PDMS slab
                                                                       100 μm                   100 μm                 100 μm
                               L+Δ
                        L             L
                  L   +Δ

                                                                                                                                εst = +1.8%

                            Peel off the PDMS slab; flip over
                            and release the strain of PDMS

                                  L
                                                                                                                                εst = +3.8%
                  L

                                                                                                                                εst = 0%

            (a)                                                 (b)

Figure 10.2 Biaxially stretchable “wavy” nanomembranes. (a) Schematic illustration of the fabrication process. (b) Optical micrographs of wavy Si
nanomembranes under different uniaxial strains at three different orientations. Source: Reproduced with permission from Choi et al. [3]. Copyright 2007,
American Chemical Society.
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
10.2 Deterministic 3D Assembly   169

        Fabricate ultrathin
        circuit mesh
                                                                     300 μm

                           Wafer
      Liftoff; deposit Cr/SiO2

                                      Deform/
                                      release                        200 μm
      Transfer fo stretched PDMS

                         PDMS
      Encapsulate with PDMS
(a)                                   (b)

                                                            1 mm

           100 μm

                      Twist

               Diag. stretch       Bend/stretch
  (c)

Figure 10.3 Stretchable, noncoplanar electronics. (a) Schematic illustration of the fabrication
process for circuits with bridge-island structures. (b) SEM images of an array of CMOS inverters
fabricated using the method in (a). (c) Optical image of CMOS inverter arrays under large
deformation including stretching, twisting, and bending. Source: Reproduced with permission
from Kim et al. [4]. Copyright 2008, PNAS.

controlled layouts of 2D structures with patterned adhesion sites to the surface
of pre-strained elastomer substrates to enable fast and scalable assembly of a
broad range of 3D structures.

10.2.1       Basic Approach of Deterministic 3D Assembly
The basic approach of deterministic 3D assembly is described in detail in Refs.
[5–7]. Briefly, the process starts with patterning 2D patterns (precursors) with
lithographically defined bonding sites. Then, the 2D precursors are bound
to a pre-stretched elastomer slab. Release of the pre-strain induces spatially
dependent twisting and bending deformations, transforming the 2D patterns
into 3D structures.
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
170   10 Flexible and Stretchable Devices from Unconventional 3D Structural Design

                                                         Form 2D precursor structures;           Figure 10.4 Schematic
                                                         stretch the assembly platform           illustration of the assembly
                                                                                                 approach for forming 3D conical
                                                       2D                                        coils of single-crystalline Si.
                                                            m                                    Source: Reproduced with
                                                             icr
                                                                o-                               permission from Yan et al. [6].
                                                                   /n
                                                                     an                          Copyright 2017, Elsevier.
                                                                        os
                                                                          tru
           Fr                                                                ct
             ee                                                                 ur
                 -s                                                               es
                     ta
                       nd
                           in
                               g
                                   sil
                                        ico
                                           ne

                                                       Transfer with selective bonding
                                                          Bo
                                                             nd
                                                                in
                                                                   g
                                                                     sit
                          St                                             es
                            re
                                   tc
                                      he
                                         d
                                              sil
                                                 ico
                                                    ne

            Re
                le                                                        Release the platform
                  as
                      ed
                           sil
                                ico
                                    ne

         As shown in Figure 10.4, 3D conical helices made from single-crystal silicon are
      fabricated, which were inaccessible 3D architectures previously. The mechanics
      and shape transformation process can be analyzed and precisely predicted by a
      finite element analysis (FEA) scheme, and excellent agreement is found between
      FEA predictions and experiments. A broad class of geometries are realized,
      including single and multiple helices, conical spirals, flowers, frameworks, and
      multilevel configurations. Moreover, this 3D assembly approach applies to var-
      ious material compositions (inorganic semiconductors, polymers, metals, and
      heterogeneous combinations) and feature sizes (submicrometer to centimeter),
      as shown in Figure 10.5.
         This deterministic 3D assembly approach provides a powerful route to sophis-
      ticated classes of 3D structures and materials. The compatibility with the CMOS
      fabrication methods, and device-grade materials, creates many opportunities for
      achieving new 3D-structure-based electronic and other devices.
         Depending on the basic 3D assembly method described in the previous
      sections, a series of strategies and processing techniques have been developed to
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
5 μm                        200 μm                                                                                     20 cm

                                                                               5 mm                           2 cm

          Sub-microscale                Microscale                  Millimeter scale              Centimeter scale                 Meter scale

                      5 μm                     200 μm                         5 mm                            2 cm                       20 cm

                 Blood cells
    (a)

       SU8                      Pl                      Ni              Au                    SU8–Au              SU8–Si          SU8–Si nanodiscs

                                                                                                                                                    1 μm

    (b)

Figure 10.5 3D structures fabricated using the deterministic 3D assembly approach with various characteristic dimensions and materials. (a) Starfish-
jellyfish-like structures. (b) 3D mesostructures of different materials. Source: Reproduced with permission from Zhang et al. [8]. Copyright 2017, Springer
Nature.
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
172   10 Flexible and Stretchable Devices from Unconventional 3D Structural Design

      extend the level of control in the deterministic 3D assembly process, which has
      greatly increased the space of attainable 3D structures.

      10.2.2                 3D Kirigami Structure in Micro-/Nanomembranes
      The John A. Rogers group from the University of Illinois Urbana-Champaign
      introduced the concept of kirigami to the 3D assembly method, where 2D
      micro-/nanomembranes have strategically designed geometries and pat-
      terns of cuts [9]. Figure 10.6 lists several examples showing how the 2D
      silicon membranes with engineered kirigami cuts at precisely defined loca-
      tions are transformed into 3D structures with strategically determined panel
      deformations.

      10.2.3                 Buckling Control Assisted by Stress and Strain Engineering
      Engineering of stress and strain in the 2D precursors could also influence the
      3D buckling process. Figure 10.7 shows two such engineering strategies. In
      Figure 10.7a, residual stress is introduced to the 2D precursor by patterning a

                2D silicon membrane            Partially assembled 3D structure   3D structure   Experiment
                z             εmax (%)
       y            x
                            0.0          0.8

      (a)
                              εmax (%)
                z
           y        x
                            0.0          1.4

      (b)
                              εmax (%)
                z x
       y                    0.0          1.4

      (c)
                z             εmax (%)

        y           x 0.0                0.9

      (d)
                z             εmax (%)
            y           x
                            0.0          1.2

      (e)

      Figure 10.6 Examples of mechanically driven kirigami for deterministic 3D assembly from 2D
      micro/nanomembranes. (a) A square cuboid. (b,c) Membranes with first- and second-order
      cross-cuts. (d,e) Membranes with symmetric and antisymmetric cuts. Scale bars, 200 μm.
      Source: Reproduced with permission from Zhang et al. [9]. Copyright 2015, PNAS.
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
10.2 Deterministic 3D Assembly          173

                              Tensile           FEM
                              residual stress
  εpre = 80%                   σresidual = +480 MPa

                                           Analytical
                     2.16 mm

                                                        εrelease = 30%                       60%                         100%
                               Compressive
                               residual stress FEM
       1.8 mm                  σresidual = –580 MPa

                                          Analytical

 (a)

                z
                                                                                                                               Transfer print sample
          x         y                                                                                                             onto PVA tape

                        old
                    te m
              stra
         Sub
 Form engineered                                                                  εmax-ribbon (%)
 substrate on mold                                              trate                                 0.04
                                                          ds ubs                  0.0
                                                     tche                      rsor
                                                                                        s
                                                 Stre                         u
                                                                    2D   prec
                                εmax-substrate                                                                             Form 2D Si/SU8 patterns
                                                                                                                             by photolithography
                              0.00         0.69
Pre-stretch engineered                                                                                       s                     εmax-ribbon (%)
                                                                                                        ture
                                                                                                 truc
substrate (60% strain);                                                                      3D s                                  0.0          2.8
  align sample onto
       substrate                                                                                                                 ure s
                                                                                                                            ruct
                    Laminate sample with                                                                         trate 3D st
                                                                                                         ubs
                        selective bonding                                                        as ed s
                                                                                            Rele
                                                        Release the substrate    εmax-substrate
                                                        to form 3D structures 0.00          0.62

 (b)

Figure 10.7 Buckling control assisted by stress and strain engineering. (a) Stress engineering.
(b) Strain engineering. SOI, silicon on insulator; PVA, poly(vinyl alcohol). Source: Reproduced
with permission from Fu et al. [10] and Nan et al. [11].

2D SiNx film onto a Si substrate prior to the 2D precursors being buckled [10].
This residual stress, either tensile or compressive, induces different buckling
mechanics and results in distinct 3D structures.
   Another strategy involves the engineering of elastomer substrates for spatially
nonuniform strain in the substrates for buckling. As Figure 10.7b illustrates, the
elastomer substrate, which is nonuniform in thickness via molding, induces spa-
tially varying strain upon release of the pre-strain, thereby creating nonuniform
3D structures [11]. A similar strain-engineered method is also used to fabricate
3D microarchitectures based on growth [12].

10.2.4          Multilayer 3D Structures
Instead of single-layered structures, multilayers of advanced materials could
also be produced using releasable, multilayer 2D precursors. The schematic
illustration of the process is shown in Figure 10.8a [13]. Multilayer 2D precursors
are transferred to the stretched elastomer using a layer-by-layer transfer printing
10 Flexible and Stretchable Devices from Unconventional 3D Structural Design - Sites at USC
SiO2              AZ 5214
                                                                                                                                            p
                                                                                                                                        Stam
                                             Fabricate 2D                                                              Layer-by-layer
                                             presursors                                                                transfer

                                                                                                     Si     SU8

                SOI wafer

                                                                                                          AZ 5214
                                         Laminate samples on
                            PVA tape     pre-stretched elastomer                                                                                Gap
                                                                                                       er
                                                                                                     om
                                         Dissolve PVA tape                                  e   last               Remove
                                                                                       ed
                                                                                 tch                               AZ 5214
                                                                          Stre
          (a)
                                                                                                                εmax (%)

                                                                                                          0.0              0.27

          (b)                                                                                                   εmax (%)

                                                                                                          0.0              4.33

          (c)

Figure 10.8 Deterministic assembly of 3D mesostructures from multilayer 2D precursors. (a) Schematic illustration of the fabrication process. (b and c)
Examples of resulting 3D multilayer structures. Scale bars, 400 μm. Source: Reproduced with permission from Yan et al. [13]. Copyright 2016, AAAS.
10.2 Deterministic 3D Assembly   175

technique. Complex 3D topologies such as dense architectures with nested
layouts are constructed (Figure 10.8b,c). The multilayer feature also enhances
the structural stability and drives the motion of extended features in those
structures.

10.2.5       Freestanding 3D Structures
A potential disadvantage of the 3D assembly method discussed so far is that the
elastomeric substrates, necessary for the assembly process, could impose engi-
neering constraints to the system as the 3D structures are mechanically tethered
to the substrates. Several techniques have been developed to bypass this limita-
tion in order to fabricate freestanding 3D structures, including interfacial pho-
topolymerization and wax-assisted transfer [14].
  The process of interfacial photopolymerization is schematically shown in
Figure 10.9a. A thin, sacrificial Al2 O3 layer is deposited between the bonding sites

 Assembly           Al2O3    SU8 droplet                              SU8 base
 substrate

                            UV light

Assemble 3D structures Drop cast SU8           Backside exposure               Release
(a)

        Assembled
       3D structures                                                Wax
                                            Drop wax
                              Al2O3        and release

      Assembly                                           Transfer
      substrate                                            print

                                             Dissolve
                                               wax

                                                              Target
                                                             substrate
                                                                                              Adhesive layer

 Quartz substrate                  Copper substrate                       Silicon substrate
(b)

Figure 10.9 Freestanding 3D structures. (a) Interfacial photopolymerization and
(b) wax-assisted transfer printing methods for fabricating freestanding 3D structures
assembled by compressive buckling. Scale bars, 500 μm. Source: Reproduced with permission
from Yan et al. [14]. Copyright 2017, PNAS.
176   10 Flexible and Stretchable Devices from Unconventional 3D Structural Design

      and the elastomer for subsequent release from the substrate. To mechanically
      hold the 3D deformed shape, a photodefinable epoxy SU8 is cast and cured
      onto the 3D structure, followed by patterned backside exposure. Developing
      of the epoxy and removal of the Al2 O3 layer releases the 3D structures into
      freestanding objects, with a thin remaining base layer.
        For the second method shown in Figure 10.9b, transfer printing is employed,
      assisted by wax encapsulation to transfer the assembled 3D structures onto the
      target substrate. The wax holds the shape of the deformed structures and is
      dissolved upon transfer of the structures onto the adhesive layer on the target
      substrate.

      10.2.6          Morphable 3D Structures by Multistable Buckling Mechanics
      3D structures that can undergo reversible transformations are important in a
      broad range of applications such as microelectromechanical systems (MEMSs),
      biomedical devices, and microrobotics. A scheme in 3D assembly was developed
      recently to fabricate morphable 3D structures relying on sequential release of the
      pre-strain in elastomeric substrates [15].
        The concept of the scheme and representative SEM images are illustrated
      in Figure 10.10a,b, respectively. Starting from a biaxially stretched flat state of
                      Shape I                                                                  Shape II
                                                        Experiment

            εx = 0%                                                             εx = 0%
            εy = 0%                                                             εy = 0%

                                       εx = 100%
                                       εy = 100%
                                                         Flat state

      εx = 50%                                                                 εx = 0%
      εy = 50%                                                                 εy = 100%

                Intermediate state I                          Crease                    Intermediate state II
      (a)

            z                              z                                        z

                y                      x         y                                         y
       x                                                                        x

        Micrometers (SU8 + silicon)            Tens of micrometers (silicon)               Millimeter (PET + Cu)
      (b)

      Figure 10.10 Morphable 3D structures by loading-path-controlled mechanical assembly.
      (a) Schematic illustration of the strategy with FEA predictions and experimental SEM images of
      formed 3D structures. (b) 2D shapes, FEA predictions, and corresponding experimental images
      of morphable 3D structures. Scale bars, 1 mm. Source: Reproduced with permission from Fu
      et al. [15]. Copyright 2018, Springer Nature.
10.3 Flexible and Stretchable Devices from 3D Assembly   177

the substrate, the pre-strain could be released in two different loading paths:
simultaneous release in both x and y directions or sequential release (y direction
first, then x direction). These two loading paths yield two distinct buckling
modes and corresponding 3D structures due to the mechanics involved in
the buckling process. The entire process is reversible, and thereby the two
shape configurations can be switched between each other continuously and
repetitively. Again, such reconfigurable 3D structures are achievable in a broad
set of materials, multilayer stacks, and over various length scales.

10.3 Flexible and Stretchable Devices from 3D
Assembly
The deterministic 3D assembly method discussed in Section 10.2 provides a ver-
satile route to the fabrication of 3D structures made of a broad range of materials,
complex geometric configurations, and over various length scales. Such 3D struc-
tures are integrated on elastomeric substrates upon assembly, making them capa-
ble of dynamically and reversibly changing their shapes. This feature makes them
promising building blocks for flexible and stretchable devices for applications
spanning from microelectronic, to optical, optoelectronic, and biomedical appli-
cations. In this section, some exemplary flexible and stretchable devices fabri-
cated using the deterministic 3D assembly are introduced.

10.3.1   Electronic Devices and Systems
As the fabrication process of the 2D precursors is compatible with the most
sophisticated CMOS process, a variety of classes of electronic components,
devices, and systems could be made on the basis of the 3D assembly method.
Furthermore, the mechanical tunability of the 3D structures gives rise to tunable
electronic properties of such flexible devices [8, 13–19].
  Several exemplary electronics devices and systems are shown in Figure 10.11.
A 3D toroidal inductor is fabricated and can be mechanically configured into
two distinct shapes by partial and then complete release of the pre-strain
(Figure 10.11a) [8]. Good agreement between the FEA-predicted and experi-
mentally measured inductance as a function of frequency is observed.
  In Figure 10.11b, a pyramidal coil is fabricated as part of a 3D NFC device taking
advantage of the multilayer stacking strategy [13]. The 3D NFC device exhibits
significantly enhanced Q factor and improved working angle over conventional
2D counterparts.
  Figure 10.11c shows a network of Si-nanomembrane-based nMOS transistors
interconnected by bridge structures [16]. Helical coils fabricated using compres-
sive buckling are used as effective electrical interconnects for soft electronics, as
shown in Figure 10.11d [17].

10.3.2   Optical and Optoelectronic Devices
Complex 3D structures inspired by origami and kirigami are promising plat-
forms for optical and optoelectronic applications. For example, a mechanically
178   10 Flexible and Stretchable Devices from Unconventional 3D Structural Design

                                                                        H (A/m)
                                                                  1                   300
                                Measurement
                                Modeling
                                                                                                                                                     LED
                        8                                                                   4
      Inductance (nH)

                        6                                                                   3
                                                                                                                                                NFC chip                                                    3D coil

                                                                                                    Q factor
                                                                                                                                                                          Capacitor
                        4                                                                   2                                              25
                                                                                                                                                                                                  3D coil
                        2                                                                   1                                              20

                                                                                                                            Q factor
                                                                                                                                           15                                                     2D coil
                        0                                                                0
                            0          2        4         6             8              10
                                                                                                                                           10
                                              Frequency (GHz)
                                                                                                                                                                                                    Modeling
      (a)                                                                                                                                   5
                                                                                                                                                                                                    Experiment
                                                                                                                                            0
                                                                                   nMOS                                                     0.0 0.4 0.8 1.2 1.6 2.0
                                                                                                               (b)                         Width of supporting ribbon wribbon (mm)
                                                                                          Bonding
                                                                                            site

                                                                                   500 μm

                                                                            nMOS

                                                                              Bonding site

                                                                                                                                                                EOG                                                       EEG
                                                                                                                                                                                         14
                                                                                                                                   1
                                                                                            1 mm                                                                                                                     Eyes
                                                                                                                 Amplitude (mV)

                                                                                                                                                                        Frequency (Hz)
                                                                                                                                                        Downside                                                    closed
                                                                                                                                                                                                    Eyes
                                                nMOS
                                                                                                                                                                                                   opened
                                                                                                                                   0                                                     12

                                                                                                                                           Upside

                                                                                                                                  –1                                                     10
                                                                                                                                       0    1    2   3 4    5   6   7                         0       1        2      3         4
                                                         Bonding site                     500 μm                                                     Time                                                    Time

                 (c)                                                                                           (d)

      Figure 10.11 Exemplary flexible electronic devices fabricated using deterministic 3D
      assembly. (a) Measured and modeled frequency dependence of the inductance and Q factor of
      a 3D torsional inductor. Source: Reproduced with permission from Zhang et al. [8]. Copyright
      2017, Springer Nature. (b) A 3D NFC device with enhanced Q factor over conventional 2D
      counterparts. Source: Reproduced with permission from Yan et al. [13]. Copyright 2016, AAAS.
      (c) A 3D-interconnected bridge structure with an array of Si nanomembrane nMOS transistors.
      Source: Reproduced with permission from Kim et al. [16]. Copyright 2018, American Chemical
      Society. (d) A flexible device composed of a network of helical coils as electrical interconnects.
      Source: Reproduced with permission from Jang et al. [17]. Copyright 2018, Springer Nature.

      tunable optical transmission window is demonstrated in Figure 10.12a [9]. As the
      membrane rotates in response to the strain applied to the elastomer substrate,
      the amount of normally incident light they block also changes continuously,
      making the device an optical shutter with well-controlled mechanical tunability.
        In Figure 10.12b, a 3D hemispherical structure is made by integrating 2D mate-
      rials (graphene, MoS2 ) with a buckled hemispherical 3D structure [20]. The 2D
      semiconductor/semimetal materials provide photodetection and light-imaging
      capabilities on the 3D structural platform.

      10.3.3                       Scaffolds as Interfaces with Biological Systems
      3D structures formed by compressive 3D assembly could also serve as electronic
      cellular scaffolds for the growth, recording the stimulation of neural networks.
2D precursor (design I, 90% pre-strain)
                                                           Bonding      1 mm                                                                                                                      100 μm
                                                           region

                                                                                                                                                                                   SU-8

                 Partially assembled 3D structure
             Experiment              FEA
                                                                                                                                                                                    Graphene           MoS2

                                            z
                                                y
                                                x        uz (μm)
                  3D optical transmission window                                                                                                                                                      SU-8
                                                     0          855

                                                                                                              θ = –45.0°, ϕ = 90.0°                 θ = 0.0°, ϕ = 90.0°             θ = 45.0°, ϕ = 90.0°
                                                                                                              θ = –45.0°, ϕ = 90.3°                 θ = –1.1°, ϕ = 91.1°            θ = 44.3°, ϕ = 91.3°
                                            z                                                 (iii)
                                                y                                 Z                     (i)                             (ii)                               (iii)                           lph
                                                                                                                     Using protractor
                                                x                                                             P2     Experimental                                                                             1 μA
                                                                                                                                                                                                 P1
         εappl = 0%      Light spot                                                      X
                                                                                                 (ii)                                          P2                  P1
                                      43%                                                                                                                                                                   0
                            Optical                 66%
                            shutter                                          y
                                                                                               (i)
                                                                                                                              P1
                                                                            θ = –45°→0°→45°                                                                                         P2
                 Receiver                                                         ϕ = 0°

          (a)                                                         (b)

Figure 10.12 An exemplary flexible 3D-structure-based device for optical and optoelectronic applications. (a) A mechanically tunable optical shutter. Scale
bars, 500 μm. Source: Reproduced with permission from Zhang et al. [9]. Copyright 2015, PNAS. (b) A 3D photodetection and imaging system. Source:
Reproduced with permission from Lee et al. [20]. Copyright 2018, Springer Nature.
180   10 Flexible and Stretchable Devices from Unconventional 3D Structural Design

                                              Schwann cell

                                                          Axon

                                                Satellite cell
                                            Pseudounipolar
                                               neuron

                                           Culture on 3D scaffolds

      (a)

      (b)

      Figure 10.13 3D electronic scaffolds for engineering neural network. (a) Schematic illustration
      of rat dorsal root ganglion (DRG) and cell populations on 3D structures. (b) Confocal
      fluorescence micrographs of DRG cells cultured on a 3D cage structure. Scale bars, 100 μm.
      Source: Reproduced with permission from Yan et al. [14]. Copyright 2017, PNAS.

      Figure 10.13 shows an example of a freestanding 3D open-cage structure used
      as scaffold for engineered dorsal root ganglion (DRG) neural networks [14]. The
      3D configuration allows interaction and communication with live cells and tis-
      sues in 3D. Experiments demonstrate that such scaffolds facilitate the reorgani-
      zation of cells into hierarchical cellular constructs. This example shows promising
      opportunities of 3D structures as cellular and tissue scaffolds in fundamental and
      applied biological studies.

      10.4 Summary
      This chapter introduces different approaches for forming 3D structures. Bonding
      nanomembranes in Si or other inorganic materials to a pre-strained elastomer
      can yield 3D wavy structures with controllable surface topologies upon release of
      the pre-strain. On this basis, deterministic 3D assembly introduces spatial con-
      trol of the adhesion sites to further expand the accessible 3D geometries. The
      final 3D geometries can be tailored through layouts of the 2D patterns, position
      of the bonding sites, pre-strains, thickness profiles of 2D patterns, loading path,
      nonuniform elastomeric substrates, and many others. Applications of such 3D
      mesostructures cover the field of electronics, optoelectronics, optical devices,
      biointerfaces, energy harvesters, microrobots, and others.
References   181

Abbreviations
CMOS        complementary metal–oxide–semiconductor
FEA         finite element analysis
MEMS        microelectromechanical system
NFC         near-field communication
PDMS        poly(dimethylsiloxane)
SEM         scanning electron microscopy

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